2SJ598-Z NEC [NEC], 2SJ598-Z Datasheet

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2SJ598-Z

Manufacturer Part Number
2SJ598-Z
Description
SWITCHING P-CHANNEL POWER MOS FET
Manufacturer
NEC [NEC]
Datasheet

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Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
for solenoid, motor and lamp driver.
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
• Low on-state resistance:
• Low C
• Built-in gate protection diode
• TO-251/TO-252 package
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SJ598 is P-channel MOS Field Effect Transistor designed
R
R
DS(on)1
DS(on)2
2. Starting T
iss
= 130 mΩ MAX. (V
= 190 mΩ MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 720 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
A
Note2
DS
C
GS
= 25°C)
= 25°C)
= 0 V)
GS
GS
= 0 V)
= –10 V, I
= –4.0 V, I
DD
P-CHANNEL POWER MOS FET
= –30 V, R
The mark
D
A
D
= –6 A)
= 25°C)
= –6 A)
I
D(pulse)
V
V
I
G
D(DC)
T
E
T
I
P
P
GSS
DATA SHEET
DSS
AS
stg
AS
= 25 Ω, V
ch
T
T
SWITCHING
shows major revised points.
–55 to +150
GS
14.4
MOS FIELD EFFECT TRANSISTOR
–60
m20
m12
m30
150
–12
1.0
23
= –20 → 0 V
mJ
°C
°C
W
W
V
V
A
A
A
ORDERING INFORMATION
PART NUMBER
2SJ598-Z
2SJ598
(TO-251)
(TO-252)
2SJ598
TO-252 (MP-3Z)
TO-251 (MP-3)
PACKAGE
2000, 2001

Related parts for 2SJ598-Z

2SJ598-Z Summary of contents

Page 1

... D(pulse 1 150 ° –55 to +150 °C stg I – 14 Ω –20 → – The mark shows major revised points. 2SJ598 PART NUMBER PACKAGE 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) (TO-251) (TO-252) 2000, 2001 ...

Page 2

... Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ µ Duty Cycle ≤ 1% Data Sheet D14656EJ4V0DS 2SJ598 MIN. TYP. MAX. UNIT µ –10 A µ –1.5 –2.0 –2 102 130 mΩ 131 190 mΩ ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 Case Temperature - C –100 Single Pulse 10 m 100 Pulse Width - s Data Sheet D14656EJ4V0DS 2SJ598 60 80 100 120 140 160 ˚ 125˚C/W th(ch- 5.43˚C/W th(ch-C) 100 1000 3 ...

Page 4

... V - Gate to Source Voltage - V GS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE –4.0 Pulsed –3.0 –2.0 –1.0 0 –100 – Channel Temperature - ch Data Sheet D14656EJ4V0DS 2SJ598 = –10 V –4.0 V Pulsed –4 –6 –8 –10 Pulsed I = – –10 –15 – – –1 mA ...

Page 5

... DYNAMIC INPUT/OUTPUT CHARACTERISTICS –60 µ – – –30 V –40 –12 V –30 –20 – 100 Gate Charge - nC G Data Sheet D14656EJ4V0DS 2SJ598 0 V –1.5 –1 – Ω – –10 –100 – – –10 GS –8 – ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 100 Starting T - Starting Channel Temperature - ch Data Sheet D14656EJ4V0DS 2SJ598 V = – Ω –20 → ≤ – 125 150 ˚C ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5 ±0.2 5.0 ±0 1.1 ±0.2 2.3 2.3 Data Sheet D14656EJ4V0DS 2SJ598 2.3 ±0.2 0.5 ±0.1 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ598 M8E 02. 11-1 ...

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