2SJ599-Z NEC [NEC], 2SJ599-Z Datasheet
2SJ599-Z
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2SJ599-Z Summary of contents
Page 1
... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14644EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan MOS FIELD EFFECT TRANSISTOR SWITCHING INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ599-Z = – – 25° –60 V DSS V ...
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... F(S- – di/dt = –100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% Preliminary Data Sheet D14644EJ1V0DS 2SJ599 MIN. TYP. MAX. UNIT – 1.5 2.0 2 111 m 1300 pF 240 pF 100 pF ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5±0.2 5.0±0 1.1±0.2 2.3 2.3 Preliminary Data Sheet D14644EJ1V0DS 2SJ599 2.3±0.2 0.5±0.1 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 3 ...
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... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SJ599 Not all The M8E 00. 4 ...