2SJ681_09 TOSHIBA [Toshiba Semiconductor], 2SJ681_09 Datasheet
2SJ681_09
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2SJ681_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) Relay Drive, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance: R High forward transfer admittance −100 μA (max) (V Low leakage current: I DSS ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
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I – −5 −6 −10 −4. −3.5 Common source Tc = 25°C −8 Pulse test −4 −3 − −2.5V −1 0 −0.4 −0.8 −1.2 −1.6 0 Drain−source voltage V ( – V ...
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(ON) −0.4 Common source Pulse test −0 −5 A −2.5 −0 −4 V −2.5 −1.2 −0 − −80 − Case temperature Tc ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 μ 100 μ Safe operating area −100 I D max (pulsed) * − max (continuous) DC operation Tc = 25°C −1 *: ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...