stu10nc70z STMicroelectronics, stu10nc70z Datasheet

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stu10nc70z

Manufacturer Part Number
stu10nc70z
Description
N-channel 700v - 0.58ohm - 9.4a Max220/i-max220 Zener-protected Powermesh??iii Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STU10NC70Z
Manufacturer:
ST
0
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
Sep 2000
STU10NC70Z
STU10NC70ZI
V
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
Symbol
dv/dt( )
I
ESD(G-S)
V
DM
P
V
V
V
T
I
DGR
TOT
I
I
GS
ISO
T
stg
DS
GS
D
D
TYPE
(1)
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.58
N-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220
700 V
700 V
V
DSS
R
<0.75
<0.75
DS(on)
C
Zener-Protected PowerMESH™III MOSFET
GS
Parameter
= 25° C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100° C
9.4 A
9.4 A
I
D
(1)I
(*)Limited only by maximum temperature allowed
SD
9.4A, di/dt 100A/µs, V
Max220
STU10NC70Z
37.6
1.28
160
9.4
5.9
--
1
2
STU10NC70ZI
3
STU10NC70Z
–65 to 150
DD
Value
700
700
±25
±50
150
4
3
V
(BR)DSS
STU10NC70ZI
37.6(*)
I-Max220
9.4(*)
5.9(*)
2000
0.44
55
, T
j
T
JMAX
W/°C
Unit
V/ns
mA
1/10
KV
°C
°C
W
V
V
V
A
A
A
V

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stu10nc70z Summary of contents

Page 1

... Zener-Protected PowerMESH™III MOSFET I D 9.4 A 9.4 A Max220 Parameter = 25° 100° 25° C (1)I 9.4A, di/dt 100A/µ (*)Limited only by maximum temperature allowed STU10NC70Z STU10NC70ZI I-Max220 Value STU10NC70Z STU10NC70ZI 700 700 ±25 9.4 9.4(*) 5.9 5.9(*) 37.6 37.6(*) 160 55 1.28 0.44 ± 2000 –65 to 150 150 (BR)DSS ...

Page 2

... STU10NC70Z/STU10NC70ZI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting °C, I ...

Page 3

... ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. STU10NC70Z/STU10NC70ZI Test Conditions Min 350V ...

Page 4

... STU10NC70Z/STU10NC70ZI Safe Operating Area For Max220 Thermal Impedance For Max220 Output Characteristics 4/10 Safe Operating Area For I-Max220 Thermal Impedance For I-Max220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STU10NC70Z/STU10NC70ZI Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

... STU10NC70Z/STU10NC70ZI Source-drain Diode Forward Characteristics 6/10 ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STU10NC70Z/STU10NC70ZI Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/10 ...

Page 8

... STU10NC70Z/STU10NC70ZI DIM. MIN. A 4.3 A1 2.2 A2 2.9 b 0.7 b1 1.25 b2 1.2 c 0. 0.8 D3 2.8 e 2.44 E 10. 8/10 Max220 MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.169 2.4 0.087 3.1 0.114 0.93 0.027 1.4 0.049 1.38 0.047 0.6 16.3 9.35 0.354 1.2 0.031 3.2 0.110 2.64 0.096 10.35 0.396 13.6 0.520 3.4 0.118 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 ...

Page 9

... I-Max220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.3 A1 2.6 A2 1.95 b 0.7 b1 1.25 b2 1.2 c 0.45 D 15.9 D1 12.5 D2 0.6 D3 1.75 e 2.44 E 10. STU10NC70Z/STU10NC70ZI inch MAX. MIN. TYP. 4.6 0.169 2.75 0.102 2.15 0.077 0.93 0.027 1.4 0.049 1.38 0.047 0.6 0.017 16.3 0.626 12.9 0.492 1 0.023 2.15 0.069 2.64 0.096 10.35 0.396 13.6 0.520 3.4 0.118 MAX. 0.181 0.108 0.084 0.036 0.055 0.054 ...

Page 10

... STU10NC70Z/STU10NC70ZI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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