stu11nb60 STMicroelectronics, stu11nb60 Datasheet

stu11nb60

Manufacturer Part Number

stu11nb60

Description

N-channel 600v - 0.5ohm - 11a - Max220 Powermesh Mosfet

Manufacturer

STMicroelectronics

Datasheet

1.STU11NB60.pdf (5 pages)

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

January 1999

STU11NB60

Symbol

dv/dt(

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

DGR

30V GATE TO SOURCE VOLTAGE RATING

stg

tot

TYPE

( )

)

DS(on)

Drain-source Voltage (V

Drain- gate Voltage (R

Gate-source Voltage

Drain Current (continuous) at T

Drain Current (pulsed)

Total Dissipation at T

Derating Factor

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

DS(on)

per area, exceptional avalanche

600 V

= 0.5

DSS

< 0.6

N-CHANNEL 600V - 0.5 - 11A - Max220

DS(on)

Parameter

= 25

= 20 k )

= 0)

11 A

= 25

= 100

(

) I

PowerMESH

11 A, di/dt

INTERNAL SCHEMATIC DIAGRAM

200 A/ s, V

-65 to 150

Max220

Value

1.28

600

160

150

STU11NB60

(BR)DSS

PRELIMINARY DATA

, Tj

MOSFET

JMAX

V/ns

Unit

1/5

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stu11nb60 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. PowerMESH INTERNAL SCHEMATIC DIAGRAM = 100 di/ STU11NB60 MOSFET PRELIMINARY DATA Max220 Value Unit 600 V 600 160 W o 1.28 W/ ...

Page 2

... STU11NB60 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... 4 Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) STU11NB60 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. ...

Page 4

... STU11NB60 DIM. MIN. A 4.3 A1 2.2 A2 2.9 b 0.7 b1 1.25 b2 1.2 c 0. 0.8 D3 2.8 e 2.44 E 10. 4/5 Max220 MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.169 2.4 0.087 3.1 0.114 0.93 0.027 1.4 0.049 1.38 0.047 0.6 16.3 9.35 0.354 1.2 0.031 3.2 0.110 2.64 0.096 10.35 0.396 13.6 0.520 3.4 0.118 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 ...

Page 5

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com . STU11NB60 5/5 ...

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