stu16nc50 STMicroelectronics, stu16nc50 Datasheet

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stu16nc50

Manufacturer Part Number
stu16nc50
Description
N-channel 500v - 0.22ohm - 16a Max220 Powermesh??ii Mosfet
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
October 2001
STU16NC50
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLIES (UPS)
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
Symbol
dv/dt(1)
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.22
V
500V
II is the evolution of the first
DSS
< 0.27
R
DS(on)
C
™.
GS
Parameter
= 25° C
GS
= 20 k )
N-CHANNEL 500V - 0.22 - 16A Max220
The layout re-
= 0)
C
C
= 25°C
= 100° C
16 A
I
D
(1)I
SD
INTERNAL SCHEMATIC DIAGRAM
16A, di/dt 100A/µs, V
PowerMesh™II MOSFET
Max220
–65 to 150
DD
Value
1.28
500
500
±30
160
150
STU16NC50
16
10
64
3
V
(BR)DSS
1
2
3
, T
j
T
JMAX.
W/° C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/8

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stu16nc50 Summary of contents

Page 1

... October 2001 N-CHANNEL 500V - 0.22 - 16A Max220 PowerMesh™II MOSFET The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° C (1)I 16A, di/dt 100A/µ STU16NC50 Max220 Value Unit 500 V 500 V ± 160 W 1.28 W/° ...

Page 2

... STU16NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... 10V G GS (see test circuit, Figure 5) Test Conditions Min 18 di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance STU16NC50 Typ. Max. Unit 128 nC 14.7 nC 41.7 nC Typ. Max. Unit Typ ...

Page 4

... STU16NC50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STU16NC50 5/8 ...

Page 6

... STU16NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... E 10. inch MAX. MIN. TYP. 4.6 0.169 2.4 0.087 3.1 0.114 0.93 0.027 1.4 0.049 1.38 0.047 0.6 0.18 16.3 0.626 9.35 0.354 1.2 0.031 3.2 0.110 2.64 0.096 10.35 0.396 13.6 0.520 3.4 0.118 STU16NC50 MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 P011R 7/8 ...

Page 8

... STU16NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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