3sk223 Renesas Electronics Corporation., 3sk223 Datasheet

no-image

3sk223

Manufacturer Part Number
3sk223
Description
Rf Amplifier For Catv Tuner N-channel Si Dual Gate Mos Field-effect Transistor 4 Pins Mini Mold
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3SK223
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
3sk223(M)-T2
Manufacturer:
NEC
Quantity:
138 000
Part Number:
3sk223-T2
Manufacturer:
NEC
Quantity:
39 000
Part Number:
3sk223-T2
Manufacturer:
NEC
Quantity:
20 000
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
FEATURES
• The Characteristic of Cross-Modulation is good.
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting:
• Small Package:
ABSOLUTE MAXIMUM RATINGS (T
PRECAUTION
or fields.
CM = 101 dB TYP. @ f = 470 MHz, G
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
*1 R
L
10 k
RF AMPLIFIER FOR CATV TUNER
NF1 = 2.2 dB TYP. (f = 470 MHz)
NF2 = 0.9 dB TYP. (f = 55 MHz)
G
Embossed Type Taping
4 Pins Mini Mold
V
V
V
V
V
I
P
T
T
D
ch
stg
DSX
G1S
G2S
G1D
G2D
D
PS
= 20 dB TYP. (f = 470 MHz)
4 PINS MINI MOLD
R
DATA SHEET
A
= –30 dB
–55 to +125
= 25 C)
8 ( 10)
8 ( 10)
200
125
18
18
18
25
MOS FIELD EFFECT TRANSISTOR
*1
*1
mW
mA
V
V
V
V
V
C
C
PACKAGE DIMENSIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
(Unit: mm)
3SK223
2.8
1.5
+0.2
–0.3
+0.2
–0.3
©
1993
1989

Related parts for 3sk223

3sk223 Summary of contents

Page 1

... DSX * 10) V G1S * 10) V G2S G1D G2D 200 125 –55 to +125 C stg 3SK223 PACKAGE DIMENSIONS (Unit: mm) +0.2 2.8 –0.3 +0.2 1.5 –0.3 5° 5° 5° 5° 1. Source 2. Drain 3. Gate 2 4. Gate 1 © 1993 1989 ...

Page 2

... MHz 0.9 1.2 1.5 pF 0.015 0. 17.0 20 470 MHz 2.2 3.2 dB 0.9 2 MHz U91/UIA* U91 1.0 to 8.0 3SK223 TEST CONDITIONS = V = – G2S 0.75 V G2S G1S = G2S G1S G2S G1S ...

Page 3

... V G1S INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5 ( G2S MHz 4.0 = 3.5 V 3.0 3.0 V 2.5 V 2.0 20 1.0 0 –1.0 V G2S 3SK223 V = 1.8 V G1S 1.6 V 1.4 V 1.2 V 1.0 V 0 – Drain to Source Voltage – 3.5 V G2S 2.5 V 3.0 V 2.0 V 1.5 V 1.0 V 0.5 V 1.0 1.5 2.0 2.5 – Gate1 to Source Voltage – V ...

Page 4

... MHz 2.0 1.5 1.0 0.5 0 –1.0 0 1.0 2.0 3.0 V – Gate2 to Source Voltage – V G2S 4 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 470 MHz ( G2S –10 –20 0 4.0 –2 – Gate2 to Source Voltage – V G2S 3SK223 2.0 4.0 6.0 8.0 ...

Page 5

... Ferrite Beads 40 pF OUTPUT 000 000 REC 2 G2S DS RFC Ferrite 2.2 k Beads 1 500 pF 1 000 000 pF V G1S 3SK223 50 1.2 mm U.E 1.2 mm U.E OUTPUT 3 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 3SK223 M4 94.11 ...

Related keywords