MA4E2502H MACOM [Tyco Electronics], MA4E2502H Datasheet
MA4E2502H
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MA4E2502H Summary of contents
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SURMOUNT Low, Medium and High TM Barrier Silicon Schottky Diodes Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% ...
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... Frequency Range MA4E2502L Low GHz Barrier MA4E2502M Medium GHz Barrier MA4E2502H High GHz Barrier Rt is the dynamic slope resistance where Rj, where Idc (Idc is in mA) Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils ...
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... E-2 MA4E2502M Medium Barrier SPICE PARAMETERS (nA E-1 9.6 1.20 1.0 E-02 MA4E2502H High Barrier SPICE PARAMETERS (nA 5.7 E-1 6.5 1.20 1.0 E-02 Circuit Mounting Dimensions (Inches) 0.020 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its ...
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... Ls (nH) MA4E2502L 0.8 MA4E2502M 0.8 MA4E2502H 0.8 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information ...