m6mgb331s4bkt Renesas Electronics Corporation., m6mgb331s4bkt Datasheet

m6mgb331s4bkt

Manufacturer Part Number

m6mgb331s4bkt

Description

33,554,432-bit 2,097,152 - Word By 16-bit/4,194,304-word By 8-bit Cmos 3.3v-only Flash Memory & 4,194,304-bit 262,144-word By 16-bit/524,288-word B

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.M6MGB331S4BKT.pdf (3 pages)

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Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

The M6MGB/T331S4BKT is a Stacked micro Multi Chip

Package (S- MCP) that contents 32M-bit Flash memory and

4M-bit Static RAM in a 52-pin TSOP for lead free use.

32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words,

3.3V-only, and high performance non-volatile memory

fabricated by CMOS technology for the peripheral circuit and

DINOR (Divided bit-line NOR) architecture for the memory cell.

4M-bit SRAM is a 524,288 bytes / 262,144 words

asynchronous SRAM fabricated by silicon-gate CMOS

technology.

M6MGB/T331S4BKT is suitable for the application of the

mobile-communication-system to reduce both the mount

space and weight.

Description

F-VCC

S-VCC

GND

A-1-A17

A18-A20

DQ0-DQ15

F-CE#

S-CE#,S-CE2

OE#

WE#

S-CE1#

F-WP#

S-VCC

F-RP#

S-CE2

WE#

A20

A18

A17

A15

A14

A13

A12

A11

A10

A19

:Vcc for Flash

:Vcc for SRAM

:GND for Flash/SRAM

:Flash/SRAM common Address

:Address for Flash

:Data I/O

:Flash Chip Enable

:SRAM Chip Enable

:Flash/SRAM Output Enable

:Flash/SRAM Write Enable

M6MGB/T331S4BKT

PIN CONFIGURATION (TOP VIEW)

4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS

10.49 mm

M6MGB/T331S4BKT provides for Software Lock Release

function. Usually, all memory blocks are locked and can not

be programmed or erased, when F-WP# is low. Using

Software Lock Release function, program or erase operation

can be executed.

Features

Access Time

Supply Voltage

Ambient Temperature

Package

Application

Mobile communication products

F-WP#

F-RP#

F-RY/BY#

BYTE#

S-LB#

S-UB#

M6MGB/T331S4BKT

Flash

SRAM

Stacked - MCP (micro Multi Chip Package)

3.3V-ONLY FLASH MEMORY &

A16

BYTE#

S-UB#

GND

S-LB#

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

F-VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

F-CE#

:Flash Write Protect

:Flash Reset Power Down

:Flash Ready/Busy

:Flash/SRAM Byte Enable

:SRAM Lower Byte

:SRAM Upper Byte

:Do not use

Outline 52PTJ-A

70ns (Max.)

VCC=2.7 ~ 3.0V

Ta=-40 ~ 85

52pin TSOP(Type-II),

Lead pitch 0.4mm

Outer-lead finishing:Sn-Cu

Renesas LSIs

Rev.0.1_48a_beez

Related parts for m6mgb331s4bkt

m6mgb331s4bkt Summary of contents

Page 1

Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Description The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- MCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP ...

Page 2

Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. MCP Block Diagram A20 A20 F-CE# F-WP# F-RP# BYTE A17 WE# OE# S-UB# S-LB# S-CE1# S-CE2 ...

Page 3

Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ...

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