m6mgt331s8akt Renesas Electronics Corporation., m6mgt331s8akt Datasheet

m6mgt331s8akt

Manufacturer Part Number

m6mgt331s8akt

Description

33,554,432-bit 2,097,152 - Word By 16-bit /4,194,304-word By 8-bit Cmos Flash Memory & 8,388,608-bit 524,288-word By 16-bit /1,048,576-word By 8-bi

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.M6MGT331S8AKT.pdf (3 pages)

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Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

The M6MGB/T331S8AKT is a Stacked micro Multi Chip

Package (S- MCP) that contents 32M-bit Flash memory

and 8M-bit Static RAM in a 52-pin TSOP for lead free use.

32M-bit Flash memory is a 4,194,304 bytes / 2,097,152

words, , single power supply and high performance non-

volatile memory fabricated by CMOS technology for the

peripheral circuit and DINOR (Divided bit-line NOR IV)

architecture for the memory cell. All memory blocks are

locked and can not be programmed or erased, when F-WP#

is low. Using Software Lock Release function, program or

erase operation can be executed.

8M-bit SRAM is a 1,048,576 bytes / 524,288 words

asynchronous SRAM fabricated by CMOS technology for the

peripheral circuit .

Description

S-CE1#

F-VCC

S-VCC

GND

A-1 - A18

A19 - A20

DQ0 - DQ15

F-CE#

S-CE1#

S-CE2

OE#

WE#

F-WP#

S-VCC

F-RP#

S-CE2

WE#

A20

A18

A17

A15

A14

A13

A12

A11

A10

A19

:Vcc for Flash

:Vcc for SRAM

:GND for Flash/SRAM

:Flash/SRAM common Address

:Address for Flash

:Data I/O

:Flash Chip Enable

:SRAM Chip Enable1

:SRAM Chip Enable2

:Flash/SRAM Output Enable

:Flash/SRAM Write Enable

PIN CONFIGURATION (TOP VIEW)

M6MGB/T331S8AKT

8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS

10.49 mm

The M6MGB/T331S8AKT is suitable for a high

performance cellular phone and a mobile PC that are

required to be small mounting area, weight and small

power dissipation

Features

Access Time

Supply Voltage

Ambient Temperature

Package

Application

Mobile communication products

F-WP#

F-RP#

BYTE#

S-LB#

S-UB#

:Flash Write protect

:Flash Reset Power Down

:Flash/SRAM Byte Enable

:SRAM Lower Byte

:SRAM Upper Byte

:Do not use

M6MGB/T331S8AKT

Stacked - MCP (micro Multi Chip Package)

Flash

SRAM

S-UB#

GND

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

F-VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

F-CE#

A16

BYTE#

S-LB#

Outer-lead finishing:Sn-Cu

70ns (Max.)

85ns (Max.)

VCC=2.7 ~ 3.0V

Ta=-40 ~ 85

52pin TSOP(Type-II),

Lead pitch 0.4mm

Rev.0.2.48a_bebz

Outline

52PTJ-A

FLASH MEMORY &

Renesas LSIs

Related parts for m6mgt331s8akt

m6mgt331s8akt Summary of contents

Page 1

Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Description The M6MGB/T331S8AKT is a Stacked micro Multi Chip Package (S- MCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP ...

Page 2

Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. MCP Block Diagram A20 A20 F-CE# F-WP# F-RP# BYTE A18 WE# OE# S-UB# S-LB# ...

Page 3

Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ...

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