m6mgd13tw66cwg-p Renesas Electronics Corporation., m6mgd13tw66cwg-p Datasheet
m6mgd13tw66cwg-p
Manufacturer Part Number
m6mgd13tw66cwg-p
Description
134,217,728-bit 8,388,608-word By 16-bit Cmos Flash Memory & 67,108,864-bit 4,194,304-word By 16-bit Cmos Mobile Ram
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.M6MGD13TW66CWG-P.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
m6mgd13tw66cwg-pA017
Manufacturer:
CERATECH
Quantity:
2 786
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
Description
The M6MGD13TW66CWG-P is a Stacked Chip Scale
Package (S-CSP) that contents 128M-bit Flash memory and
64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded
solder ball.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
64M-bit Mobile RAM is a 4,194,304 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible to
an asynchronous SRAM.
The cells are automatically refreshed and the refresh control is
not required for system. The device also has the partial block
refresh scheme and the power down mode by writing the
command.
1
FM-VCC
GND
A0-A21
DQ0-DQ15 : Data I/O
F-CE1#
F-CE2#
F-OE#
F-WE#
: VCC for Flash / Mobile RAM
: GND for Flash / Mobile RAM
: Common address for Flash/Mobile RAM
: Flash chip enable 1
: Flash chip enable 2
: Write enable for Flash Memory
: Output enable for Flash Memory
PIN CONFIGURATION (TOP VIEW)
DU
CE1#
GND
CE2#
DU
NC
OE#
DU
DU
A5
A4
1
A0
F-
F-
F-
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
INDEX(Laser Marking)
A18
A17
A7
A3
A2
A1
2
A6
CE#
M-
DQ9
DQ8
DQ0
DQ1
3
UB#
DU
LB#
OE#
M-
M-
M-
(Top View)
DQ10
DQ11
DQ2
DQ3
A19
4
WP#
NC
DU
F-
8.5 mm
DQ12
GND
DU
DU
NC
RP#
NC
VCC
F-
FM-
The M6MGD13TW66CWG-P is suitable for a high
performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small power
dissipation.
5
Features
Application
Mobile communication products
Access Time
Supply Voltage
Ambient Temperature
Package
F-RP#
F-WP#
F-RY/BY# : Flash Memory Ready /Busy
M-CE#
M-OE#
M-WE#
M-LB#
M-UB#
NC
DU
RY/BY#
DQ13
A21
NC
DQ6
DQ4
DQ5
WE#
6
F-
F-
DQ15
DQ14
A10
DQ7
A16
A8
WE#
7
A9
M-
M6MGD13TW66CWG-P
A15
A14
A13
A12
A20
A11
GND
DU
DU
8
DU
DU
DU
: Write enable for Mobile RAM
: Write protect for Flash
: Mobile RAM chip enable
: Upper byte control for Mobile RAM
: Non Connection
: Reset power down for Flash
: Output enable for Mobile RAM
: Don’t Use
: Lower byte control for Mobile RAM
E
F
G
J
A
B
C
D
H
K
M
L
Mobile RAM
Flash
Random Access/ Page Access
Stacked-CSP ( Chip Scale Package)
70ns /25ns (Max.)
85ns /25ns (Max.)
FM-VCC=2.7 ~ 3.0V
Ta= -40 ~ 85 degree
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Sn-Pb
Renesas LSIs
Rev.1.0.48a_bezb
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m6mgd13tw66cwg-p Summary of contents
Page 1
... Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Description The M6MGD13TW66CWG Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a 8,388,608 words, single power ...
Page 2
... A21-A0, F-OE#, F-WE#, F-CE1#, Input CIN F-CE2#, F-WP#, F-RP#, M-OE#, capacitance M-WE#, M-CE#, M-LB#, M-UB# Output COUT DQ15-DQ0, F-RY/BY# Capacitance 2 M6MGD13TW66CWG-P 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) FM-Vcc GND 128Mbit DINOR IV Flash Memory 64Mbit Mobile RAM Conditions Ta=25°C, f=1MHz, Vin=Vout=0V ...
Page 3
... Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. REJ03C0167 © 2003 Renesas Technology Corp. New publication, effective April 2003. Specifications subject to change without notice M6MGD13TW66CWG-P 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Renesas LSIs ...