IR2214 IRF [International Rectifier], IR2214 Datasheet - Page 26

• Manufacturer Part Number: IR2214
• Description: HALF-BRIDGE GATE DRIVER IC
• Manufacturer: IRF [International Rectifier]

IR2214/IR22141(SS)
Distance from H to L voltage
The IR2214 pin out maximizes the distance be-
tween floating (from DC- to DC+) and low voltage
pins. It’s strongly recommended to place com-
ponents tied to floating voltage in the high volt-
age side of device (V
components in the opposite side.
Ground plane:
Ground plane must not be placed under or
nearby the high voltage floating side to minimize
noise coupling.
Gate drive loops:
Current loops behave like an antenna able to re-
ceive and transmit EM noise. In order to reduce
EM coupling and improve the power switch turn
on/off performances, gate drive loops must be
reduced as much as possible. Figure 23 shows
the high and low side gate loops.
Moreover, current can be injected inside the gate
drive loop via the IGBT collector-to-gate parasitic
capacitance. The parasitic auto-inductance of the
gate loop contributes to develop a voltage across
the gate-emitter increasing the possibility of self
turn-on effect. For this reason is strongly recom-
mended to place the three gate resistances close
together and to minimize the loop
area (see figure 23).
26
VB/ VCC
VS/COM
SSDH/L
H/LON
H/LOP
Figure 23: gate drive loop
PCB LAYOUT TIPS
resistance
gate
B
, V
Gate Drive
Loop
S
side) while the other
:
V
GE
I
GC
C
GC
ADVANCE DATA
Supply capacitors:
IR2214 output stages are able to quickly turn on
IGBT with up to 2 A of output current. The sup-
ply capacitors must be placed as close as pos-
sible to the device pins (V
ground tied supply, V
supply) in order to minimize parasitic inductance/
resistance.
Routing and placement example:
Figure 24 shows one of the possible layout solu-
tions using a 3 layer PCB. This example takes
into account all the previous considerations.
Placement and routing for supply capacitors and
gate resistances in the high and low voltage side
minimize respectively supply path and gate drive
loop. The bootstrap diode is placed under the
device to have the cathode as close as possible
to bootstrap capacitor and the anode far from
high voltage and close to V
B
and V
CC
CC
.
S
and V
for the floating
www.irf.com
SS
for the