IRHLNA73064 IRF [International Rectifier], IRHLNA73064 Datasheet
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IRHLNA73064
Manufacturer Part Number
IRHLNA73064
Description
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
Manufacturer
IRF [International Rectifier]
Datasheet
1.IRHLNA73064.pdf
(9 pages)
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
For footnotes refer to the last page
Product Summary
International Rectifier’s R7
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Absolute Maximum Ratings
I D @V GS = 4.5V,T C = 100°C Continuous Drain Current
I D @V GS = 4.5V,T C = 25°C
www.irf.com
Part Number
IRHLNA77064
IRHLNA73064
P D @ T C = 25°C
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
Radiation Level
100K Rads (Si)
300K Rads (Si)
Parameter
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
TM
Logic Level Power
R
0.012Ω
0.012Ω
DS(on)
56A*
56A*
I
D
Features:
n
n
n
n
n
n
n
n
n
n
Fast Switching
5V CMOS and TTL Compatible
Low Total Gate Charge
Surface Mount
Single Event Effect (SEE) Hardened
Simple Drive Requirements
Ease of Paralleling
Ceramic Package
Light Weight
Hermetically Sealed
300 (for 5s)
3.3 (Typical)
-55 to 150
60V, N-CHANNEL
224
250
±10
402
56*
56*
2.0
6.9
56
25
SMD-2
IRHLNA77064
TECHNOLOGY
Pre-Irradiation
PD-97177A
Units
W/°C
V/ns
mJ
mJ
° C
A
W
V
A
g
1