IRHLNA73064 IRF [International Rectifier], IRHLNA73064 Datasheet

IRHLNA73064

Manufacturer Part Number

IRHLNA73064

Description

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)

Manufacturer

IRF [International Rectifier]

Datasheet

1.IRHLNA73064.pdf (9 pages)

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RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-2)

For footnotes refer to the last page

Product Summary

International Rectifier’s R7

MOSFETs provide simple solution to interfacing CMOS

and TTL control circuits to power devices in space and

other radiation environments. The threshold voltage

remains within acceptable operating limits over the

full operating temperature and post radiation. This is

achieved while maintaining single event gate rupture

and single event burnout immunity.

These devices are used in applications such as current

boost low signal source in PWM, voltage comparator

and operational amplifiers.

Absolute Maximum Ratings

I D @V GS = 4.5V,T C = 100°C Continuous Drain Current

I D @V GS = 4.5V,T C = 25°C

www.irf.com

Part Number

IRHLNA77064

IRHLNA73064

P D @ T C = 25°C

T STG

dv/dt

V GS

E AR

E AS

I DM

I AR

T J

Radiation Level

100K Rads (Si)

300K Rads (Si)

Parameter

Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

Logic Level Power

0.012Ω

DS(on)

56A*

Features:

Fast Switching

5V CMOS and TTL Compatible

Low Total Gate Charge

Surface Mount

Single Event Effect (SEE) Hardened

Simple Drive Requirements

Ease of Paralleling

Ceramic Package

Light Weight

Hermetically Sealed

300 (for 5s)

3.3 (Typical)

-55 to 150

60V, N-CHANNEL

224

250

±10

402

56*

2.0

6.9

SMD-2

IRHLNA77064

™

TECHNOLOGY

Pre-Irradiation

PD-97177A

Units

W/°C

V/ns

° C

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