sp8m5 ROHM Co. Ltd., sp8m5 Datasheet - Page 3

• Manufacturer Part Number: sp8m5
• Description: 4v Drive Nch Pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
P-ch
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
−1.0
−30
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2600
Typ.
Typ.
450
350
110
5.5
20
25
30
20
50
70
25
10
−
−
−
−
−
−
Max.
Max.
−1.2
−2.5
±10
−1
28
35
42
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
S
D
D
D
D
D
D
D
=−1.6A, V
GS
DS
DS
DS
GS
GS
DD
GS
= −1mA, V
= −7.0A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
L
G
= −7.0A
=4.29Ω
=10Ω
= ±20V, V
= −30V, V
= −10V, I
= −10V
=0V
= −10V
= −5V
−15V
Conditions
Conditions
GS
GS
GS
GS
GS
DS
DD
D
GS
=0V
DS
= −1mA
= −10V
=0V
= −10V
= −4.5V
= −4.0V
=0V
=0V
−15V
Rev.C
SP8M5
3/5