IRHNA57260SE IRF [International Rectifier], IRHNA57260SE Datasheet
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IRHNA57260SE
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IRHNA57260SE Summary of contents
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... RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2) Product Summary Part Number Radiation Level R IRHNA57260SE 100K Rads (Si) International Rectifier’ technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance LET of 80 (MeV/(mg/cm )) ...
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... IRHNA57260SE, JANSR2N7473U2 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...
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... Br 36.7 309 I 59.8 341 Au 82.3 350 250 200 150 100 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com IRHNA57260SE, JANSR2N7473U2 100K Rads (Si) Min Max 200 — 2.0 4.5 — 100 — -100 — 10 — 0.039 — ...
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... IRHNA57260SE, JANSR2N7473U2 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 100 6.0V BOTTOM 5.0V 10 5.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 1000 100 20µs PULSE WIDTH 1 5.0 6.0 7.0 8 Gate-to-Source Voltage ( 1000 TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 3 ° ...
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... C rss Drain-to-Source Voltage (V) DS 1000 100 T = 150 C ° ° 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD www.irf.com IRHNA57260SE, JANSR2N7473U2 SHORTED 100 1000 100 25° 150° Single Pulse GS 0.1 1.0 1.2 1.4 1 ...
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... IRHNA57260SE, JANSR2N7473U2 100 T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 90% 125 150 ° 10 d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 Pre-Irradiation + - V GS ≤ 1 ≤ ...
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... Pre-Irradiation D.U 20V GS 0.01 Ω Charge www.irf.com IRHNA57260SE, JANSR2N7473U2 800 15V 600 DRIVER 400 + - 200 0 25 Starting T , Junction Temperature ( C) V (BR)DSS Same Type as D.U.T. 12V TOP 24A 34A BOTTOM 53. ...
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... IRHNA57260SE, JANSR2N7473U2 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 50V, starting 25°C, L= 0.27mH Peak 53.5A 12V Â ≤ 53.5A, di/dt ≤ 190A/µ ≤ 200V ≤ 150°C Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St ...