r1rw0408di Renesas Electronics Corporation., r1rw0408di Datasheet - Page 4

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r1rw0408di

Manufacturer Part Number
r1rw0408di
Description
Wide Temperature Range Version 4m High Speed Sram 512-kword ?? 8-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
R1RW0408DI Series
Operation Table
CS#
H
L
L
L
L
Note: H: V
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
Voltage on any pin relative to V
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Notes: 1. V
Recommended DC Operating Conditions
(Ta = 40 to +85 C)
Parameter
Supply voltage
Input voltage
Notes: 1. V
Rev.1.00, Mar.12.2004, page 4 of 10
2. V
2. V
3. The supply voltage with all V
4. The supply voltage with all V
OE#
H
L
H
L
IH
T
T
IL
IH
, L: V
(min) = 2.0 V for pulse width (under shoot)
(max) = V
(min) = 2.0 V for pulse width (under shoot)
(max) = V
IL
, : V
WE#
H
H
L
L
CC
CC
+2.0 V for pulse width (over shoot)
+2.0 V for pulse width (over shoot)
IH
SS
or V
SS
Mode
Standby
Output disable
Read
Write
Write
IL
V
Symbol
V
V
V
CC
SS
IH
IL
*
*
4
3
CC
SS
pins must be on the same level.
pins must be on the same level.
Min
3.0
0
2.0
0.5*
Symbol
V
V
P
Topr
Tstg
Tbias
CC
T
T
V
I
I
I
I
I
SB
CC
CC
CC
CC
1
CC
, I
current
SB1
6 ns.
6 ns.
6 ns.
6 ns.
Typ
3.3
0
Value
1.0
I/O
High-Z
High-Z
D
D
D
0.5 to +4.6
0.5*
40 to +85
55 to +125
40 to +85
OUT
IN
IN
1
to V
CC
+ 0.5*
Max
3.6
0
V
0.8
CC
Ref. cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
+ 0.5*
2
2
Unit
V
V
W
C
C
C
Unit
V
V
V
V

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