r1rw0416di Renesas Electronics Corporation., r1rw0416di Datasheet - Page 6

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r1rw0416di

Manufacturer Part Number
r1rw0416di
Description
Wide Temperature Range Version 4m High Speed Sram 256-kword ?? 16-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
R1RW0416DI Series
AC Characteristics
(Ta = 40 to +85 C, V
Test Conditions
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Byte select to output valid
Output hold from address change
Chip select to output in low-Z
Output enable to output in low-Z
Byte select to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Byte deselect to output in high-Z
Rev.1.00, Mar.12.2004, page 6 of 12
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
D
OUT
CC
Zo = 50
= 3.3 V
Output load (A)
0.3 V, unless otherwise noted.)
1.5 V
RL = 50
30 pF
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
RC
AA
ACS
OE
BA
OH
CLZ
OLZ
BLZ
CHZ
OHZ
BHZ
D
OUT
(for t
353
R1RW0416DI
-2
Min
12
3
3
0
0
CLZ
t
BHZ
Output load (B)
, t
, t
OLZ
WHZ
, t
Max
12
12
6
6
6
6
6
BLZ
, and t
3.3 V
, t
CHZ
319
5 pF
OW
, t
)
OHZ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
,
Notes
1
1
1
1
1
1

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