hpmx-2006 ETC-unknow, hpmx-2006 Datasheet - Page 2

• Manufacturer Part Number: hpmx-2006
• Description: Upconverter/amplifier
• Manufacturer: ETC-unknow

The amplifier features a single-
ended 50
port. The open collector output is
easily matched with a simple
2 element network, providing
flexible use and good power
added efficiency. The amplifier
can be disabled to allow use of the
mixer alone, reducing the current
HPMX-2006 Absolute Maximum Ratings
Notes:
1. Operation of this device in excess of any of these parameters may cause
2. T
3. Derate at 7 mW/ C for T
Recommended operating range of V
Standard Test Conditions
Unless otherwise stated, all test data was taken on packaged parts under the following conditions:
HPMX-2006 Guaranteed Electrical Specifications
Standard test conditions apply unless otherwise noted.
Symbol
Symbol
I
I
I
I
permanent damage.
C
C
T
C
C
P
CASE
P
P
V
V
LO input: 1750 MHz, -3 dBm, single-ended
IF input: 150 MHz, 300 mV
Z
See Figure 11 for test set-up schematic diagram.
STG
amp
amp
diss
T
mix
mix
out
out
CC
out mixer
cc
j
= 25 C
= +3.0 VDC, Z
match on the input
Sleep Mode Current, Mixer
Sleep Mode Current, Amplifier
Mixer Transmit Current
Amplifier Transmit Current
SSB Output Power, Mixer Only
Output Power, Amplifier Only (-9.5 dBm in)
Supply Voltage
Power Dissipation
Single-Ended Input Mixer LO Voltage
Single-Ended Input Mixer IF Voltage
Amplifier Input RF Power
Junction Temperature
Storage Temperature
= Z
Parameters and Test Conditions
in amp
Parameter
out
= 50 , Z
CASE
= 50 , ambient temperature T
>82 C.
[2,3]
p-p
out amp
, single-ended, terminated in a 50
cc
draw to around 15 mA. The entire
IC can be put into a standby mode
reducing current consumption to
under 40 A from a 3V source.
The SSOP-16 package insures that
the IC occupies a minimal amount
of printed circuit board space.
= 2.7 to 5.5 V, T
per Figure 11 ( (L=2.8 nH, C=2.2 pF)
[1]
7-67
a
= -40 to + 85 C
a
= 25 C
Units
dBm
mW
V
V
V
C
C
Min.
-0.2
pull-up resistor (R1R2 in Figure 11)
-40
-40
Units
dBm
dBm
mA
mA
A
A
Mixer
The HPMX-2006 is manufactured
using Hewlett-Packard’s 30 GHz
ISOSAT-II process which com-
bines stepper lithography, self
alignment, ion implantation
techniques and gold metalization
to produce state-of-the-art RFICs.
V
V
Max.
C
C
+150
+150
174
+ 0.2
+ 0.2
Min.
Thermal Resistance
+2.5
8
-11
jc
= 150 C/W
Min.
Typ.
-0.2
+3.8
-40
-40
15
23
-9
Amplifier
Max.
Max.
+150
+150
274
[2]
20
20
18
28
+ 5
8
: