BZT52C10W HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.], BZT52C10W Datasheet - Page 2

• Manufacturer Part Number: BZT52C10W
• Description: SILICON PLANAR ZENER DIODES
• Manufacturer: HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

JinYu
semiconductor
２
Characteristics at T
BZT52C2V4W
BZT52C2V7W
BZT52C3V0W
BZT52C3V3W
BZT52C3V6W
BZT52C3V9W
BZT52C4V3W
BZT52C4V7W
BZT52C5V1W
BZT52C5V6W
BZT52C6V2W
BZT52C6V8W
BZT52C7V5W
BZT52C8V2W
BZT52C9V1W
BZT52C10W
BZT52C11W
BZT52C12W
BZT52C13W
BZT52C15W
BZT52C16W
BZT52C18W
BZT52C20W
BZT52C22W
BZT52C24W
BZT52C27W
BZT52C30W
BZT52C33W
BZT52C36W
BZT52C39W
1)
V
Z
Type
is tested with pulses (20 ms).
Marking
Code
MM
MH
MN
MR
NM
MK
MP
MX
MY
MZ
NC
ND
NH
NN
NR
MJ
NA
NB
NE
NF
NK
NP
NX
NY
NZ
PA
PB
PC
PD
NJ
a
= 25
O
V
C
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
znom
V
Zener Voltage Range
mA
l
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
ZT
www.htsemi.com
for
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
9.4...10.6
2.2...2.6
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4.8...5.4
5.8...6.6
6.4...7.2
7.7...8.7
8.5...9.6
28...32
31...35
34...38
37...41
4...4.6
4.4...5
5.2...6
7...7.9
V
V
ZT
1)
Ω (Max.)
100
100
130
Z
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
ZT
Dynamic Impedance
Ω (Max.)
Z
600
600
600
600
600
600
600
500
480
400
150
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
80
80
80
ZK
at I
mA
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
ZK
Reverse Leakage Current
μA (Max.)
I
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
50
20
10
R
5
5
3
3
3
2
1
3
2
1
BZT52C…W
Ｄａｔｅ：２０１１／０５
at V
10.5
11.2
12.6
15.4
16.8
18.9
23.1
25.2
27.3
14
21
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
R