DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage............................................................................................................................................................. 1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage .............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA
Peak Forward Input Current (Value applies for tw
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C
Notes:
1.
2.
*JEDEC registered data
Features:
•
•
•
•
•
4N47
4N48
4N49
0.305 [7.75]
0.335 [8.51]
Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
JAN, JANTX, JANTXV,
0.040 [1.02]
0.155 [3.94]
0.185 [4.70]
MAX.
Package Dimensions
0.500 [12.70]
MIN.
0.016Ø [0.41]
0.019Ø[0.48]
6 LEADS
0.022Ø [5.08]
SINGLE CHANNEL OPTOCOUPLERS
www.micropac.com
0.034 [0.864]
0.028 [0.711]
<
1
3
µ
2
s, PRR
5
1
6
7
45°
E-MAIL:
3 - 14
<
•
725 E.Walnut St., Garland, TX 75040
300 pps) ...............................................................................1A
Applications:
•
•
•
•
•
optosales@micropac.com
0.045 [1.14]
0.029 [0.73]
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
7
5
A
K
•
(972) 272-3571
Schematic Diagram
PRODUCTS{PRIVATE }
OPTOELECTRONIC
Mii
•
DIVISION
Fax (972) 487-6918
C
E
B
3
1
2