SMP30 STMICROELECTRONICS [STMicroelectronics], SMP30 Datasheet

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SMP30

Manufacturer Part Number
SMP30
Description
TELECOM EQUIPMENT PROTECTION: TRISIL
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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FEATURES
MAIN APPLICATIONS
Telecommunication equipment such as
DESCRIPTION
The SMP30-xxx series has been designed to
protect telecommunication equipment against
lightning and transient induced by AC power lines.
The package / die size ratio has been optimized by
using the SMA package.
BENEFITS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils
are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459
and FCC part 68. Trisils have UL94 V0 resin approved. SMA package is JEDEC registred. (Trisils are UL
497B approved - file: E136224).
November 2002 - Ed: 4B
Bidirectional crowbar protection
Voltage range from 62V to 270V
Low capacitance from 12pF to 20pF typ.@ 50V
Low leakage current: I
Holding current: I
Repetitive peak pulse current:
I
Analog and digital line cards (xDSL, T1/E1,
ISDN...).
Terminals (phone, fax, modem...) and central
office equipment.
PP
= 30 A (10/1000 µs)
®
H
= 150 mA min.
R
= 2µA max.
TELECOM EQUIPMENT PROTECTION: TRISIL™
SCHEMATIC DIAGRAM
(JEDEC DO-214AC)
SMP30-xxx
SMA
1/8

Related parts for SMP30

SMP30 Summary of contents

Page 1

... Analog and digital line cards (xDSL, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. DESCRIPTION The SMP30-xxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMA package. ...

Page 2

... SMP30-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS Peak Surge Standard GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20 / K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B THERMAL RESISTANCES ...

Page 3

... Storage temperature range T stg T Maximum junction temperature j Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µ 10µs = 25°C) Parameter tp = 1000µs SMP30-xxx Value 10/1000 µs 30 8/20 µs 70 10/560 µs 35 5/310 µs 40 10/160 µs 45 1/20 µs 70 2/10 µs 100 8/20 µ ...

Page 4

... V SMP30-62 56 SMP30-68 61 SMP30-100 90 SMP30-120 108 SMP30-130 117 2 SMP30-180 162 SMP30-200 180 SMP30-220 198 SMP30-240 216 SMP30-270 243 Note measured guarantee V BRmin V R Note 2: See functional breakover voltage test circuit 1. Note 3: See test circuit 2. Note 4: See functional holding current test circuit 3. ...

Page 5

... Fig. 4: Relative variation of breakover voltage ver- sus junction temperature 1.10 1.05 1.00 270 100 120 -40 Fig. 6: Relative variation of thermal impedance versus pulse duration. Z 1E+2 1E+1 1E+0 1E-1 100 125 1E-3 Tj=25°C F=1MHz VRMS=1V 50 100 300 [ =25° (° (°C/W) th(j-a) Zth(j-a) t (s) p 1E-2 1E-1 1E+0 1E+1 SMP30-xxx 80 100 1E+2 5E+2 5/8 ...

Page 6

... SMP30-xxx TEST CIRCUIT 1 FOR DYNAMIC I 100 V / µs, di/dt < µs, Ipp = 30A 2 10 µF U Key Tek ‘System 2’ generator with PN246I module µs, di/dt < µs, Ipp = µH 60 µF U Key Tek ‘System 2’ generator with PN246I module TEST CIRCUIT 2 for I AND V ...

Page 7

... FOOT PRINT in millimeters (in inches) 1.45 2.40 1.45 (0.057) (0.094) (0.057) R D.U.T value by short circuiting the D.U. 10A, 10/1000 s. pp REF SMP30-xxx Surge generator ) level in a functional test circuit. H DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.70 0.075 0.106 0.05 0.20 0.002 0.008 1.25 1.65 0.049 0.065 0.15 0.41 ...

Page 8

... QAB SMP30-100 QAC SMP30-120 QAD SMP30-130 QAE SMP30-180 QAF SMP30-200 QAG SMP30-220 QAH SMP30-240 QAI SMP30-270 QAJ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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