BZT55C36 TEMIC [TEMIC Semiconductors], BZT55C36 Datasheet - Page 3

• Manufacturer Part Number: BZT55C36
• Description: Silicon Epitaxial Planar Z-Diodes
• Manufacturer: TEMIC [TEMIC Semiconductors]

Typical Characteristics (T
TELEFUNKEN Semiconductors
Rev. A1: 12.12.1994
95 9602
95 9599
95 9601
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Figure 3 : Typical Change of Working Voltage vs. Junction
600
500
400
300
200
100
200
150
100
1.3
1.2
1.1
1.0
0.9
0.8
50
0
0
–60
Figure 5 : Diode Capacitance vs. Z–Voltage
0
0
V
Ztn
T
=V
40
amb
T
0
5
j
Zt
– Junction Temperature ( C )
– Ambient Temperature ( C )
/V
V
Z
Temperature
(25 C)
Z
80
60
10
– Z-Voltage ( V )
TK
VZ
=10 10
120
120
15
–4
T
/K
V
j
j
= 25 C
R
20
160
180
= 25 C unless otherwise specified)
= 2V
8 10
6 10
4 10
2 10
–2 10
–4 10
0
–4
–4
–4
–4
–4
–4
/K
/K
/K
/K
200
240
/K
/K
25
Figure 2 : Typical Change of Working Voltage under Operating
95 9598
95 9600
95 9605
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
0.001
1000
0.01
100
100
0.1
Figure 6 : Forward Current vs. Forward Voltage
10
15
10
–5
10
1
5
0
1
0
0
0
T
j
= 25 C
0.2
Conditions at T amb =25 C
10
5
V
F
T
V
V
– Forward Voltage ( V )
j
= 25 C
Z
Z
0.4
10
– Z-Voltage ( V )
20
– Z-Voltage ( V )
I
I
BZT55C...
Z
Z
=5mA
=5mA
30
0.6
15
40
0.8
20
1.0
25
50
3