p5504evg Niko Semiconductor Co., Ltd., p5504evg Datasheet

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p5504evg

Manufacturer Part Number
p5504evg
Description
P-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
P5504EVG
Manufacturer:
NIKOS
Quantity:
20 000
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
2
ELECTRICAL CHARACTERISTICS (T
REV 1.0
PRODUCT SUMMARY
Pulse width limited by maximum junction temperature.
Duty cycle  1%
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Operating Junction & Storage Temperature Range
Lead Temperature (
Continuous Drain Current
Power Dissipation
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
V
-40V
(BR)DSS
THERMAL RESISTANCE
PARAMETER
1
Junction-to-Ambient
PARAMETERS/TEST CONDITIONS
Junction-to-Lead
R
55mΩ
DS(ON)
1
/
1
16
” from case for 10 sec.)
1
P-Channel Logic Level Enhancement
1
-6A
I
D
A
SYMBOL
Mode Field Effect Transistor
= 25 °C Unless Otherwise Noted)
J
V
R
= 25 °C, Unless Otherwise Noted)
V
I
(BR)DSS
I
I
D(ON)
DS(ON)
GS(th)
GSS
DSS
g
fs
T
T
T
T
A
A
A
A
SYMBOL
= 25 °C
= 70 °C
= 25 °C
= 70 °C
R
R
G
V
JA
JL
STATIC
DS
= -30V, V
V
V
V
V
V
V
V
V
TEST CONDITIONS
DS
GS
GS
GS
DS
DS
DS
DS
1
S
D
= V
= -4.5V, I
= -5V, V
= -10V, I
= -10V, I
= 0V, I
= 0V, V
= -32V, V
TYPICAL
GS
GS
SYMBOL
, I
= 0V, T
T
D
D
GS
V
V
j
I
, T
= -250A
GS
P
T
D
D
I
DM
= -250A
D
DS
GS
D
D
L
GS
= ±20V
= -5.5A
= -5.5A
= -4.5A
stg
= -10V
= 0V
J
= 125 °C
Halogen-Free & Lead-Free
MAXIMUM
-55 to 150
25
40
MIN TYP MAX
LIMITS
-40
-20
-1
-4.8
±25
275
-40
-20
3.1
-6
2
LIMITS
4
5,6,7,8 :DRAIN
1,2,3 :SOURCE
-1.5
65
38
11
P5504EVG
±250 nA
-2.5
:GATE
10
94
55
1
UNITS
°C / W
°C / W
Oct-29-2009
UNITS
UNIT
SOP-8
°C
A
W
V
V
A
V
A
S

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p5504evg Summary of contents

Page 1

... MAXIMUM 25 40 LIMITS MIN TYP MAX -40 = -250 -1 -250 ±20V 0V 125 ° -10V - -4. -5. -5. P5504EVG SOP-8 :GATE UNITS °C UNITS ° ° UNIT V -2.5 ±250 nA 1  mΩ Oct-29-2009 ...

Page 2

... Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P5504EVG”, DATE CODE or LOT # REV 1.0 Mode Field Effect Transistor DYNAMIC C iss -10V 1MHz ...

Page 3

... NIKO-SEM P-Channel Logic Level Enhancement TYPICAL PERFORMANCE CHARACTERISTICS REV 1.0 Mode Field Effect Transistor 125° 0.1 25° C 0.01 0.001 0.0001 0 0 Body Diode Forward Voltage(V) 3 P5504EVG Halogen-Free & Lead-Free -55° C 0.4 0.6 0.8 1.0 1.2 1.4 Oct-29-2009 SOP-8 ...

Page 4

... Pluse 1.00E-03 1.E-05 1.E-04 REV 1.0 Mode Field Effect Transistor 150 120 90 100us 10m s 100m 10S DC 0 0.0001 10 100 1.E-03 1.E-02 4 P5504EVG Halogen-Free & Lead-Free SINGLE PULSE R = 40˚ C/W θJA T =25˚ 0.001 0.01 0.1 1 Note 1.Duty cycle ℃/W 2.R = thJA 3 P 4.R (t) = r(t)*R thJA 1 ...

Page 5

... NIKO-SEM P-Channel Logic Level Enhancement REV 1.0 Mode Field Effect Transistor 5 P5504EVG SOP-8 Halogen-Free & Lead-Free Oct-29-2009 ...

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