ap2301n ETC-unknow, ap2301n Datasheet - Page 2

• Manufacturer Part Number: ap2301n
• Description: P-channel Enhancement Mode
• Manufacturer: ETC-unknow

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
AP2301N
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
1
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
=-2.8A
=-1A
G
D
=25℃, I
=V
=6Ω,V
=15Ω
=0V, I
=-5V, I
=-2.8V, I
=V
=-5V, I
=-20V, V
=-16V, V
=±12V
=-6V
=-5V
=-15V
=0V
=-6V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
GS
S
D
D
D
=-250uA
=-1.6A, V
=-2.8A
=-2.8A
=-250uA
=-10V
D
GS
GS
=-2.0A
S
=0V
=0V
=-1.2V
GS
D
=-1mA
=0V
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.36
Typ.
-0.1
295
170
4.4
5.2
0.6
5.2
9.7
19
29
65
-
-
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
-1.2
130
190
-10
-10
10
-1
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A
V