en29lv010-45rtip Eon Silicon Solution Inc., en29lv010-45rtip Datasheet

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en29lv010-45rtip

Manufacturer Part Number
en29lv010-45rtip
Description
Da0. 1 Megabit 128k X 8-bit Uniform Sector Cmos 3.0 Volt-only Flash Memory
Manufacturer
Eon Silicon Solution Inc.
Datasheet
GENERAL DESCRIPTION
The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 131,072 bytes.
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
- Regulated voltage range: 3.0-3.6 volt read
• High performance
- Full voltage range: access times as fast as 55
- Regulated voltage range: access times as fast
• Low power consumption (typical values at 5
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 μA typical standby current (standard access
• Flexible Sector Architecture:
- Eight 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
operations for battery-powered applications.
and write operations for high performance
3.3 volt microprocessors.
time to active mode)
as 45ns
MHz)
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
EN29LV010
1 Megabit (128K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
ns
da0.
FEATURES
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Any byte can be programmed typically in 8µs.The EN29LV010
Rev. C, Issue Date: 2008/04/23
1
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
• JEDEC standard DATA polling and toggle bits
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• triple-metal double-poly triple-well CMOS Flash
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package options
• Commercial and industrial Temperature Range
Read or program another Sector during
Erase Suspend Mode
commands
feature
Technology
- 4mm x 6mm 34-ball WFBGA
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
EN29LV010

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en29lv010-45rtip Summary of contents

Page 1

... WAIT states in high-performance microprocessor systems. The EN29LV010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program ...

Page 2

... CONNECTION DIAGRAMS This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 2 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 3

... FIGURE 1. LOGIC DIAGRAM A0 - A16 CE# OE# WE# SIZE (Kbytes) A16 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 3 Rev. C, Issue Date: 2008/04/23 EN29LV010 EN29LV010 DQ0 – DQ7 A15 A14 ...

Page 4

... Block Protect Switches Erase Voltage Generator Generator Chip Enable Output Enable Logic STB Timer ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 4 Rev. C, Issue Date: 2008/04/23 EN29LV010 EN29LV010 -55 -70 - DQ0-DQ7 Input/Output Buffers STB Data Latch ...

Page 5

... A14 A10 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 5 Rev. C, Issue Date: 2008/04/23 EN29LV010 DQ0-DQ7 D IN OUT High-Z High-Z High OUT OUT DQ7 to DQ0 ...

Page 6

... USER MODE DEFINITIONS Standby Mode The EN29LV010 has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical placed in CMOS-compatible standby when the has a TTL-compatible standby mode, which reduces the maximum V placed in TTL-compatible standby when the are in a high-impedance state independent of the Read Mode The device is automatically set to reading array data after device power-up ...

Page 7

... V be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This ID method is described in a separate document called EN29LV010 Supplement, by contacting a representative of Eon Silicon Solution, Inc. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t independent of the CE#, WE# and OE# control signals ...

Page 8

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. do not initiate a write cycle the device will not accept commands on the rising edge of IH ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 8 Rev. C, Issue Date: 2008/04/23 EN29LV010 . The LKO = VIH. To initiate and OE are W E ...

Page 9

... COMMAND DEFINITIONS The operations of the EN29LV010 are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. ...

Page 10

... The system must write the reset command to exit the autoselect mode and return to reading array data. Programming Command Programming the EN29LV010 is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary ...

Page 11

... Another Erase Suspend command can be written after the device has resumed erasing. WRITE OPERATION STATUS DQ7: DATA Polling The EN29LV010 provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the embedded Programming, Sector Erase, Chip Erase, Erase Suspend. (See Table 6) When the embedded Programming is in progress, an attempt to read the device will produce the complement of the data last written to DQ7 ...

Page 12

... The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing diagram is shown in Figure 8. DQ6: Toggle Bit I The EN29LV010 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling will result in DQ6 toggling between “ ...

Page 13

... In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Flowchart 6). This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 13 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 14

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ7# Toggle 0 0 Toggle Toggle Data Data Data DQ7# Toggle 0 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 14 Rev. C, Issue Date: 2008/04/23 EN29LV010 DQ3 DQ2 No N/A toggle 1 Toggle N/A Toggle Data Data N/A N/A ...

Page 15

... Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently ‘-1-0-1-0-1-0-1-’ addressed Sector. Program during Erase Suspend on- going at current address Erase Suspend read on DQ2 non Erase Suspend Sector ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 15 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 16

... PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Write Program Command Sequence (shown below) Data Poll Device Verify Data? Last Address? Yes Programming Done ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 16 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 17

... START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Yes ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 17 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 18

... Flowchart 4. Embedded Erase Command Sequence Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 18 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 19

... Read Data DQ7 = Data? No DQ5 = 1? Read Data (1) DQ7 = Data? Read Data twice DQ6 = Toggle? No Read Data twice (2) DQ6 = Toggle? ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 19 Rev. C, Issue Date: 2008/04/23 EN29LV010 Start Yes No Yes Yes No Fail Pass Start No Yes DQ5 = 1? Yes No ...

Page 20

... CE# = Vcc ± 0.3V Byte program, Sector or Chip Erase in progress V = Vcc ± 0 Vss ± -100 μ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 20 Rev. C, Issue Date: 2008/04/23 EN29LV010 Min Max Typ ±1 ± 0.4 1 5.0 -0.5 0.8 0.7 x Vcc ± ...

Page 21

... Output timing measurement reference levels This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3.3 V Ω 6.2 k -45R -55 1 TTL Gate 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 21 Rev. C, Issue Date: 2008/04/23 EN29LV010 Ω 2.7 k -70 -90 Unit 100 100 0.0-3.0 0.0-3.0 V 1.5 1.5 V 1.5 1.5 V ...

Page 22

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Test Setup ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 22 Rev. C, Issue Date: 2008/04/23 EN29LV010 Speed Options -45R -55 -70 -90 Min Max Max ...

Page 23

... High Low) Min 0 SetupTime Min 0 Hold Time Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ID ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 23 Rev. C, Issue Date: 2008/04/23 EN29LV010 Speed Options -55 -70 -90 Unit ...

Page 24

... Toggle and Min 10 Data Polling Min 0 Min 0 Min 0 Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ID ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 24 Rev. C, Issue Date: 2008/04/23 EN29LV010 Speed Options -55 -70 -90 Unit ...

Page 25

... I/O pins on all I/O Pins ss Test Conditions 150°C 125°C ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 25 Rev. C, Issue Date: 2008/04/23 EN29LV010 Comments Excludes 00H programming prior to erasure Excludes system level overhead Minimum 100K cycles Min Max -1.0 V 12.0 V -1.0 V Vcc + 1 ...

Page 26

... Test Setup OUT Test Setup OUT ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 26 Rev. C, Issue Date: 2008/04/23 EN29LV010 Typ Max Unit 6 7 Typ Max Unit ...

Page 27

... AC CHARACTERISTICS Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings Figure 7. Program Operation Timings This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 27 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 28

... Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 28 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 29

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Enter Erase Erase Suspend Suspend Program Erase Enter Suspend Read ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 29 Rev. C, Issue Date: 2008/04/23 EN29LV010 Erase Resume Enter Erase Erase Erase Suspend Suspend Complete Program Read ...

Page 30

... All other pins -0.5 to Vcc+0.5 Vcc -0.5 to +4 Regulated Voltage Range: 3.0-3.6 Standard Voltage Range: 2.7 to 3.6 Vcc +1.5V ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 30 Rev. C, Issue Date: 2008/04/23 EN29LV010 Value Unit °C °C °C 200 –1.0V for ss + 1.5 V for periods up to 20ns. See figure cc ...

Page 31

... PHYSICAL DIMENSIONS 34-Ball Very-Very-Thin-Profile Fine Pitch Ball Grid Array (WFBGA) Note : Controlling dimensions are in millimeters (mm). This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 32

... PL 032 — 32-Pin Plastic Leaded Chip Carrier This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 32 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 33

... PHYSICAL DIMENSIONS (continued) 32L TSOP-1 8mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 34

... PHYSICAL DIMENSIONS (continued) 32L TSOP-1 8mm x 14mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 34 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 35

... S = 32-pin 8mm x 14mm TSOP-1 SPEED 45R = 45ns Regulated range 3.0V~3. 55ns 70 = 70ns 90 = 90ns BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 010 = 1 Megabit (128K x 8) uniform sector ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 35 Rev. C, Issue Date: 2008/04/23 EN29LV010 ...

Page 36

... Add the WFBGA package description in page 1 and 35、 CONNECTION DIAGRAMS in page 2 and PHYSICAL DIMENSIONS in page 31 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 36 Rev. C, Issue Date: 2008/04/23 EN29LV010 Date 2003/12/10 2004/01/05 2008/04/23 ...

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