glt6400m16 G-Link Technology Corporation, glt6400m16 Datasheet

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glt6400m16

Manufacturer Part Number
glt6400m16
Description
Ultra Low Power 256k X 16 Cmos Sram
Manufacturer
G-Link Technology Corporation
Datasheet
Features :
∗ Equal access and cycle time.
∗ 120 ns access time.
∗ Tri-state output.
∗ Automatic power-down when
∗ Multiple center power and ground pins
∗ Individual byte controls for both Read
∗ Industrial grade (-40°C ~ 85°C)
∗ Available in 48-fpBGA/44L TSOPII.
∗ CE2 pin available for fpBGA only.
Function Block Diagram :
Single +2.3V to 2.7V Power Supply.
Low-power consumption.
-Active: 30mA Icc at 120ns.
-Stand by :
deselected.
for improved noise immunity.
and Write cycles.
available.
20 µA (CMOS input / output , LL)
5 µA (CMOS input / output, SL)
G -LINK
BHE
BLE
CE1
WE
CE2
OE
I/O
I/O
8
0
- I/O
- I/O
Web : www.glink.com.tw
15
G-Link Technology Corporation, Taiwan
7
Control
Logic
TEL : 886-2-27968078
Description :
RAM organized as 262,144 words by 16 bits. Easy
memory expansion is provided by an active LOW
and
feature when deselected. Separate Byte Enable
controls (
be accessed.
I/O7.
Chip Enable
Enable (
HIGH.
Chip Enable
Enable (
X \TO(WE)
- 1 -
Circuit
Circuit
Data
Data
Email : sales@glink.com.tw
The GLT6400M16 is a low power CMOS Static
This device has an automatic power – down mode
Writing to these devices is performed by taking
Reading from the device is performed by taking
OE
BHE
Pre-Charge Circuit
Column Address
Memory Array
Column Select
pin and active HIGH CE2.
BLE
BLE
BLE
2048 x 2048
and CE2 are held HIGH.
I/O Circuit
controls the upper bits I/O8 – I/O15.
CE1
CE1
Ultra Low Power 256k x 16 CMOS SRAM
BLE
/
/
and
BHE )
BHE
with Output enable
with Write Enable
BHE
controls the lower bits I/O0 –
Vcc
Vss
) Low while Write Enable
Low
) allow individual bytes to
while CE2 remains
GLT6400M16
WE
OE
Feb 2004(Rev. 1.2)
and byte
and byte
CE1

Related parts for glt6400m16

glt6400m16 Summary of contents

Page 1

... WE OE BHE BLE CE1 CE2 Description : The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW and OE This device has an automatic power – down mode feature when deselected. Separate Byte Enable controls ( be accessed ...

Page 2

... Data Input and Data Output 2.5V Power Supply Lower Byte Enable Input ( I/O Higher Byte Enable Input ( I/O Ground No Connection G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 2 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM BHE BLE I/O ...

Page 3

... CC Gnd 0 -0.2* IL /2. RC G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 3 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM Feb 2004(Rev. 1.2) Power Mode Standby Deselected Standby Deselected Standby Deselected Active Output Disabled Active Output Disabled Active Lower Byte Read ...

Page 4

... V IN (TA = -25°C to +85°C) Data Retention Mode Vcc-typ V DR >= 1.0V t CDR G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 4 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM 120 Unit Min Max µ µ ...

Page 5

... BHZ G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 5 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM AC Test Loads and Waveforms TTL *Including Scope and Jig Capacitance Unit Note 4,5 ns ...

Page 6

... AA t ACE BLZ OLZ High - Z G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 6 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM Feb 2004(Rev. 1. BHZ t OHZ t OH Data Valid BHZ t OHZ t OH Data Valid ...

Page 7

... WHZ 100 - High-Z G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 7 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM Unit Note (2~6, High-Z Feb 2004(Rev ...

Page 8

... High - High - WHZ High - Z G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 8 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM (2~6, High - Z (2~6, High - Z Feb 2004(Rev. 1.2) ...

Page 9

... Address OUT High - BLZ WHZ High - Z G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 9 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM (2~6, High - Z Feb 2004(Rev. 1.2) ...

Page 10

... CE1 or WE must be HIGH or CE2 must be LOW during address transition. 11. All write cycle timings are referenced from the last valid address to the first transition address. G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 10 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM Feb 2004(Rev. 1.2) ...

Page 11

... Blank : Standard L : Low Power LL : Low Low Power SL : Super Low Power G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 11 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM PACKAGE TSOPII 44L TSOPII 44L TSOPII 44L TSOPII 44L SPEED PACKAGE -SRAM/PSEUDO SRAM ...

Page 12

... G -LINK Package Information 44 pin Small Outline J-form Package (TSOPII) G-Link Technology Corporation, Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 - 12 - GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM Feb 2004(Rev. 1.2) ...

Page 13

... G -LINK GLT6400M16 fpBGA ∅b aaa D D1 G-Link Technology Corporation, Taiwan Web : www ...

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