DS1230AB-100-IND DALLAS [Dallas Semiconductor], DS1230AB-100-IND Datasheet - Page 5

• Manufacturer Part Number: DS1230AB-100-IND
• Description: 256k Nonvolatile SRAM
• Manufacturer: DALLAS [Dallas Semiconductor]

PARAMETER
Read Cycle
Time
Access Time
Valid
Valid
Output Active
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
Output Active
from
Data Setup
Time
Data Hold Time
OE
CE
OE
AC ELECTRICAL CHARACTERISTICS (cont'd)
to Output
to Output
or
WE
WE
CE
to
SYMBOL
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
t
WR1
WR2
t
COE
DH1
DH2
AW
WC
WP
RC
OE
CO
OD
OH
DS
DS1230AB-120
MIN
DS1230Y-120
120
120
90
15
50
10
5
5
0
5
5
0
MAX
120
120
60
35
35
5 of 12
DS1230AB-150
MIN
DS1230Y-150
150
150
100
15
60
10
5
5
0
5
5
0
MAX
150
150
70
35
35
MIN
DS1230AB-200
200
200
100
DS1230Y-200
15
80
10
5
5
0
5
5
0
MAX
200
100
200
35
35
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1230Y/AB
12
13
12
13
5
5
3
5
5
4