HSC2621 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], HSC2621 Datasheet

HSC2621

Manufacturer Part Number

HSC2621

Description

PNP SILICON TRANSISTOR

Manufacturer

HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Datasheet

1.HSC2621.pdf (1 pages)

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█ ELECTRICAL CHARACTERISTICS（T

█ APPLICATIONS

█ h

█ ABSOLUTE MAXIMUM RATINGS（T

Symbol

Cob

CE(sat)

BE(sat)

CBO

EBO

Color TV Chroma Output

stg

CBO

CEO

EBO

——Collector Current……………………………………200mA

——Junction Temperature……………………………… 150℃

——Collector Dissipation（T

——Collector Dissipation……………………………… 1.2W

——Collector Current（Pulse）…………………………700mA

——Storage Temperature………………………… -55~150℃

——Emitter-Base Voltage………………………………6.5V

——Collector-Emitter Voltage……………………… 300V

——Collector-Base Voltage………………………… 300V

Shantou Huashan Electronic Devices Co.,Ltd.

Classification

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain-Bandwidth Product

Output Capacitance

40—80

Characteristics

Applications

=25℃）…………………… 10W

60—120

Min

=25℃）

Typ

Max

1.0

200

0.6

1.0

NPN S I L I C O N T R A N S I S T O R

100—200

MHz

Unit

μA V

TO-126

HSC2621

2―Collector，C

1―Emitter，E

3―Base，B

=20mA, I

=6V, I

=10V, I

=30V, I

=200V, I

=50V, f=1MHz

Test Conditions

=10mA

=10mA,

=2mA

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