HSCH-5316 HP [Agilent(Hewlett-Packard)], HSCH-5316 Datasheet - Page 2

• Manufacturer Part Number: HSCH-5316
• Description: Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Applications
The beam lead diode is ideally
suited for use in stripline or
microstrip circuits. Its small
physical size and uniform dimen-
sions give it low parasitics and
repeatable RF characteristics
through K-band.
The basic medium barrier devices
in this family are DC tested
HSCH-5310, -5312, and -5316. A
batch matched version is available
as the HSCH-5317. Equivalent low
barrier devices are HSCH-5330,
-5332, and -5336. Batch matched
Table IA. Electrical Specifications for RF Tested Diodes at T
*Minimum batch size 20 units.
Note:
1. C
Conditions
Number
HSCH-
T
Part
5318
5314
5340
Test
= C
J
+ 0.02 pF (fringing cap).
Matched
Batch*
HSCH-
0.3 dB
25
5319
5315
5341
NF
Z
IF
Medium
Barrier
Low
9.375 GHz
NF (dB)
DC Load Resistance - 0
LO Power = 1 mW
I
Figure
16 GHz
26 GHz
Noise
F
Max.
6.2 at
7.2 at
7.5 at
= 30 MHz, 1.5 dB NF
versions are available as
HSCH-5331 and -5333.
For applications requiring
guaranteed RF-tested perform-
ance up to 26 GHz, the HSCH-5340
is selected with batch match units
available as the HSCH-5341. The
HSCH-5318 is selected for 6.2 dB
maximum noise figure at
9.375 GHz; with RF batch match
units available as the HSCH-5319.
The HSCH-5314 is rated at 7.2 dB
maximum noise figure at 16 GHz
with RF batch match units
available as the HSCH-5315.
Min. Max.
Impedance
200
150
Z
IF
I
( )
F
400
350
Max.
SWR
1.5:1
1.5:1
I
R
Voltage
V
Break-
down
BR
Min.
10 A
4
4
(V)
Dynamic
I
F
R
Resis-
tance
Max.
= 5 mA
D
12
16
20
( )
Assembly Techniques
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
Substrates.”
A
2
f = 1 MHz
C
Capaci-
= 25 C
V
Total
tance
R
Max.
T
0.25
0.15
0.10
= 0 V
(pF)
Forward
I
Voltage
V
F
F
Max.
= 1 mA
500
375
(mV)
Leakage
Current
I
V
R
Max.
R
100
400
(nA)
= 1 V