FDB9403 FAIRCHILD [Fairchild Semiconductor], FDB9403 Datasheet

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FDB9403

Manufacturer Part Number
FDB9403
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDB9403L_F085
Quantity:
240
©2012 Fairchild Semiconductor Corporation
FDB9403_F085_F085 Rev. B1
FDB9403_F085
N-Channel Power Trench
40V, 110A, 1.2mΩ
Features
Applications
Package Marking and Ordering Information
MOSFET Maximum Ratings
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
3:
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
V
V
I
E
P
T
R
R
Symbol
D
Typ r
Typ Q
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Primary Switch for 12V Systems
DSS
GS
AS
D
J
θJC
θJA
Device Marking
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/alternator
Distributed Power Architectures and VRM
, T
R
θJA
STG
FDB9403
DS(on)
g(tot)
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (V
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
= 164nC at V
J
= 1mΩ at V
= 25°C, L = 0.18mH, I
GS
FDB9403_F085
GS
= 10V, I
= 10V, I
Device
o
C
R
D
AS
D
θJC
= 80A
= 80A
= 88A, V
is guaranteed by design while
T
J
GS
2
= 25°C unless otherwise noted
DD
pad of 2oz copper.
Parameter
=10) (Note 1)
TO-263AB
Package
®
= 40V during inductor charging and V
MOSFET
1
R
Reel Size
330mm
θJA
T
T
C
C
is determined by the user's board design. The maximum rating
G
TO-263AB
FDB SERIES
= 25°C
= 25°C
S
(Note 3)
(Note 2)
DD
= 0V during time in avalanche
Tape Width
24mm
D
See Figure4
-55 to + 175
G
Ratings
2.22
0.45
333
±20
110
704
40
43
www.fairchildsemi.com
Quantity
800 units
July
D
S
2012
Units
W/
o
o
C/W
C/W
mJ
o
W
V
V
A
C
o
C

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FDB9403 Summary of contents

Page 1

... R mounting surface of the drain pins. θJC presented here is based on mounting ©2012 Fairchild Semiconductor Corporation FDB9403_F085_F085 Rev. B1 ® MOSFET G S TO-263AB FDB SERIES T = 25° ...

Page 2

... Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD T Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 4: The maximum value is specified by design 175°C. Product is not tested to this condition in production. FDB9403_F085 Rev 25°C unless otherwise noted J Test Conditions I = 250μ ...

Page 3

... SINGLE PULSE 0. Figure 3. 1000 V = 10V GS 100 SINGLE PULSE FDB9403_F085 Rev. B1 500 400 300 200 100 0 125 150 175 NOTE: Refer to Fairchild Application Notes AN9757 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance ...

Page 4

... GS Figure 7. Transfer Characteristics 250 200 150 100 0.0 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. Saturation Characteristics FDB9403_F085 Rev. B1 1000 100 100us 10 1ms 10ms DC 1 1E-3 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching 200 100 -55 ...

Page 5

... T , JUNCTION TEMPERATURE( J Figure 13. Normalized Gate Threshold Voltage vs Temperature 100000 10000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 15. Capacitance vs Drain to Source Voltage FDB9403_F085 Rev. B1 1.8 μ s 1.6 1.4 1.2 1 175 Figure 12. Normalized Rdson vs Junction 1 ...

Page 6

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB9403_F085 Rev. B1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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