RFP60P03 FAIRCHILD [Fairchild Semiconductor], RFP60P03 Datasheet

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RFP60P03

Manufacturer Part Number
RFP60P03
Description
60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFP60P03
Manufacturer:
HARRIS
Quantity:
40
Part Number:
RFP60P03
Manufacturer:
INTERSIL
Quantity:
20 000
December 1995
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Features
• 60A, 30V
• r
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
Description
The
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
NOTE: When ordering use the entire part number.
Formerly developmental type TA49045.
Symbol
Absolute Maximum Ratings
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
RFG60P03
RFP60P03
RF1S60P03
RF1S60P03SM
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
Derate above +25
DS(ON)
PART NUMBER
C
= +25
©
o
Harris Corporation 1995
S E M I C O N D U C T O R
RFG60P03,
C Operating Temperature
o
= 0.027
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
PACKAGE AVAILABILITY
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
G
TO-247
TO-220AB
TO-262AA
TO-263AB
RFP60P03,
PACKAGE
T
D
S
C
= +25
RF1S60P03
o
C
RFG60P03
RFP60P03
F1S60P03
F1S60P03
BRAND
RF1S60P03, RF1S60P03SM
and
4-51
60A, 30V, Avalanche Rated, P-Channel
Packages
RFG60P03, RFP60P03,
Enhancement-Mode Power MOSFETs
SIDE METAL)
(BOTTOM
DRAIN
(FLANGE)
(FLANGE)
DRAIN
J
DRAIN
, T
GATE
SOURCE
DGR
DSS
STG
DM
GS
AS
D
D
T
JEDEC STYLE TO-247
Refer to Peak Current Curve
RF1S60P03, RFS60P03SM
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
RFG60P03, RFP60P03,
Refer to UIS Curve
-55 to +175
M
A
1.17
176
-30
-30
60
20
SOURCE
File Number
(FLANGE)
SOURCE
DRAIN
DRAIN
SOURCE
GATE
DRAIN
GATE
DRAIN
GATE
UNITS
W/
o
W
V
V
V
A
C
o
3951.1
C

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RFP60P03 Summary of contents

Page 1

... SOURCE DRAIN JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN JEDEC TO-263AB M A DRAIN (FLANGE) GATE SOURCE RFG60P03, RFP60P03, RF1S60P03, RFS60P03SM -30 DSS -30 DGR Refer to Peak Current Curve DM Refer to UIS Curve AS 176 D 1. -55 to +175 ...

Page 2

... Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Electrical Specifications T = +25 C PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge ...

Page 3

... RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves -500 -100 -10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) V MAX = -30V DSS - DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 1. SAFE OPERATING AREA CURVE -70 -60 -50 -40 -30 -20 - 100 T , CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs ...

Page 4

... RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves PULSE DURATION = 250 s, V 2.0 1.5 1.0 0.5 0.0 -80 - JUNCTION TEMPERATURE ( J FIGURE 7. NORMALIZED r vs JUNCTION DS(ON) TEMPERATURE 2.0 1.5 1.0 0.5 0.0 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE 5000 4000 C ISS 3000 C OSS 2000 C RSS 1000 ...

Page 5

... RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves -200 -100 -10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT (Continued) STARTING T ...

Page 6

... RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Temperature Compensated PSPICE Model for the RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM .SUBCKT RFP60P03 5.01e 3.9e-9 CIN 6 8 3.09e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK -36.59 EDS EGS ...

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