RJK60S5DPE RENESAS [Renesas Technology Corp], RJK60S5DPE Datasheet - Page 2

• Manufacturer Part Number: RJK60S5DPE
• Description: 600V - 20A - SJ MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

RJK60S5DPE
Electrical Characteristics
Notes: 4. Pulse test
R07DS0639EJ0100 Rev.1.00
Apr 23, 2012
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Item
Symbol
V
R
V
R
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
V
GS(off)
DS(on)
d(on)
d(off)
Qg
DS(on
Rg
Q
DSS
GSS
t
I
t
t
DF
rr
rr
r
f
rr
Min
600
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.150
0.375
1600
2160
10.5
0.96
Typ
400
2.5
8.2
8.5
5.6
23
25
49
23
27
25
—
—
—
—
0.178
Max
±0.1
1.60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
5
Unit
mA
μA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
Ω
V
V
V
A
I
V
V
V
I
Ta = 150°C
I
f = 1 MHz
V
V
V
f = 100kHz
I
V
R
Rg = 10 Ω
V
V
I
I
I
V
di
D
D
D
D
D
F
F
DS
GS
DS
DS
DS
GS
GS
L
DD
GS
GS
F
= 20 A, V
= 20 A
= 10 mA, V
= 10 A, V
= 10 A, V
= 10 A
= 20 A
/dt = 100 A/μs
= 30 Ω
= 600 V, V
= 10 V, I
= 25 V, V
= 25 V
= +30V, −20 V, V
= 0
= 10 V
= 480 V
= 10 V
= 0
Test conditions
Note4
Note4
GS
GS
GS
D
GS
GS
= 0
= 1 mA
= 10 V
= 10 V
GS
= 0
= 0
Preliminary
Note4
= 0
Note4
(Ta = 25°C)
Page 2 of 6
DS
Note4
Note4
= 0