PH3134-25M MA-COM [M/A-COM Technology Solutions, Inc.], PH3134-25M Datasheet
![no-image](/images/no-image-200.jpg)
PH3134-25M
Available stocks
Related parts for PH3134-25M
PH3134-25M Summary of contents
Page 1
... PH3134-25M Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • ...
Page 2
... PH3134-25M Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 3.10 3.54 25.0 3.25 3.57 25.0 3.40 4.16 25.0 Gain vs. Frequency 9.5 9.0 8.5 8.0 7.5 3.10 3.18 3.25 Fre q (GHz) RF Test Fixture Impedance F (GHz) Z (Ω) IF 3.10 16.0 + j5.0 3.25 14.5 + j2.0 3.40 11.5 + j0.0 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements ...
Page 3
... PH3134-25M Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...