STFN STMICROELECTRONICS [STMicroelectronics], STFN Datasheet - Page 3

• Manufacturer Part Number: STFN
• Description: N-CHANNEL 30V - 0.039W - 4A SOT23-6L STripFET II POWER MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ELECTRICAL CHARACTERISTICS (T
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
C
SD
C
C
d(on)
Q
Q
fs
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
oss
t
t
iss
rss
rr
gs
gd
r
(1)
f
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-Off Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
CASE
V
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
V
SD
SD
DS
DD
DD
GS
DD
DD
G
G
DS
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4 A, V
= 4 A, di/dt = 100 A/µs,
= 10 V
= 15 V, I
= 24 V, I
= 5 V
= 15 V, I
= 20 V, T
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
V
V
,
GS
GS
I
D
D
D
GS
D
j
= 2 A
= 4 A,
= 150°C
= 2 A,
= 0
= 2 A
= 4.5 V
= 4.5 V
GS
= 0
Min.
Min.
Min.
Min.
Typ.
Typ.
Typ.
100
6.5
3.6
Typ.
35
25
14
11
25
22
330
2
90
40
3
Max.
Max.
Max.
Max.
1.2
STT5NF30L
16
9
4
Unit
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
pF
pF
pF
A
A
V
A
S
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