STF/I15NM60N STMICROELECTRONICS [STMicroelectronics], STF/I15NM60N Datasheet - Page 4

• Manufacturer Part Number: STF/I15NM60N
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
1. Value measured at turn off under inductive load
Table 5.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq.
rss
iss
gs
gd
(1)
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
V
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
DS
DS
GS
DS
GS
= 1mA, V
= V
= 10V, I
=15V, I
= 50V, f =1MHz,
= 0
= 0, V
= 480V, I
= 10V
= Max rating,
= ±20V
= 480V,I
= 10V
= Max rating,@125°C
Test conditions
Test conditions
GS
, I
DS
D
GS
D
D
D
= 7A
D
= 0V to 480V
= 250µA
= 7A
= 0
= 14A,
= 14A
Min.
600
Min.
2
0.270 0.299
Typ.
1250
Typ.
100
137
6.0
30
10
10
37
18
3
6
oss
Max.
Max.
100
100
when V
1
4
DS
V/ns
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω