AOT412L AOSMD [Alpha & Omega Semiconductors], AOT412L Datasheet
AOT412L
Related parts for AOT412L
AOT412L Summary of contents
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... AOT412 TM N-Channel SDMOS General Description The AOT412 and AOT412L is fabricated with SDMOS trench technology that combines excellent R low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. - RoHS Compliant ...
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AOT412 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
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AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 120 100 (Volts) DS Fig 1: On-Region Characteristics (Note = =10V ...
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AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =50V DS I =20A (nC) g Figure 7: Gate-Charge Characteristics 1000.0 100.0 R DS(ON) limited 10.0 DC 1.0 T =175°C J(Max) ...
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AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25° =150° 0.000001 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (Note ...
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AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 220 200 di/dt=800A/µs 180 160 140 120 100 Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 180 ...
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AOT412 + VDC - Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & W aveform Vgs 10V + ...