SFR/U2955 FAIRCHILD [Fairchild Semiconductor], SFR/U2955 Datasheet - Page 2

• Manufacturer Part Number: SFR/U2955
• Description: Advanced Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

SFR/U2955
Symbol
O
O
O
O
O
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
5
2
4
1
3
R
BV
BV/ T
V
Notes ;
t
t
V
I
I
C
C
C
GS(th)
Q
Q
I
Q
DS(on)
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2.0mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
SD
t
SD
t
S
rr
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
g
_ <
J
-9.4A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-7.6A, V
_ <
250A/ s, V
Characteristic
Characteristic
DD
=-25V, R
DD
_ <
G
=27
BV
DSS
(T
*
C
, Starting T
, Starting T
=25
O
O
_ <
4
1
o
C unless otherwise specified)
2%
Min.
Min.
-2.0
-60
J
--
--
--
--
--
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25
=25
-0.04
o
Typ.
o
Typ.
0.22
C
465
140
C
2.9
6.0
3.6
40
11
21
29
20
15
80
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
-100
-4.0
100
600
215
-7.6
-3.8
-10
0.3
-30
60
30
50
65
50
19
--
--
--
--
--
--
--
V/
nA
nC
ns
pF
ns
A
V
V
V
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=-250 A
G
=-9.4A
F
=25
=25
=18
/dt=100A/ s
=0V,I
=-5V,I
=-20V
=20V
=-60V
=-48V,T
=-10V,I
=-30V,I
=0V,V
=-30V,I
=-48V,V
See Fig 13
Test Condition
Test Condition
o
o
POWER MOSFET
C,I
C,I
See Fig 5
D
P-CHANNEL
D
S
F
DS
=-250 A
=-9.4A
=-250 A
=-7.6A,V
D
D
D
C
GS
=-25V,f =1MHz
=-3.8A
=-3.8A
=-9.4A,
=125
=-10V,
See Fig 7
o
C
GS
O
O
=0V
4
4
O
O
O
O
O
4
4
5
5
4