bc856bw ON Semiconductor, bc856bw Datasheet

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bc856bw

Manufacturer Part Number
bc856bw
Description
General Purpose Transistors
Manufacturer
ON Semiconductor
Datasheet

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BC856BWT1 Series,
BC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
PNP Silicon
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Junction and Storage Temperature
These transistors are designed for general purpose amplifier
Pb−Free Packages are Available
(Note 1) T
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Symbol
T
V
V
V
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−100
−5.0
Max
−65
−45
−30
−80
−50
−30
150
883
1
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
xx
M
G
2
MARKING DIAGRAM
BASE
http://onsemi.com
1
= Specific Device Code
= Date Code*
= Pb−Free Package
3
1
COLLECTOR
xx M G
EMITTER
Publication Order Number:
SC−70/SOT−323
G
3
2
CASE 419
STYLE 3
BC856BWT1/D

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bc856bw Summary of contents

Page 1

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • Pb−Free Packages are Available ...

Page 2

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage = −10 mA Collector −Base Breakdown Voltage = −10 mA Emitter −Base Breakdown Voltage = −1.0 mA Collector Cutoff Current (V = −30 V) ...

Page 3

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series 2 − 25°C A 1.0 0.7 0.5 0.3 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 − COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain −2.0 T −1.6 −1 − −0.8 − − −0.4 0 −0.02 −0.1 −1 BASE CURRENT (mA) B Figure 3 ...

Page 4

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series V = −5 25°C A 2.0 1.0 0.5 0.2 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 I , COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain −2.0 −1 −20 mA − −10 mA −1.2 −0.8 −0 25° −0.02 −0.05 −0.1 − ...

Page 5

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series 1.0 0 0.5 0.5 0.2 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 SINGLE PULSE 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 −200 1 s −100 T = 25° 25°C − BC858 BC857 −10 BC856 −5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −1.0 −5.0 − COLLECTOR−EMITTER VOLTAGE (V) CE Figure 14. Active Region Safe Operating Area ...

Page 6

... BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series 0.05 (0.002) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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