STU8NB90 STMICROELECTRONICS [STMicroelectronics], STU8NB90 Datasheet

STU8NB90

Manufacturer Part Number

STU8NB90

Description

N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET

Manufacturer

STMICROELECTRONICS [STMicroelectronics]

Datasheet

1.STU8NB90.pdf (5 pages)

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

December 1998

STU8NB90

Symbol

dv/dt(

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

DGR

30V GATE TO SOURCE VOLTAGE RATING

stg

tot

TYPE

( )

)

DS(on)

Drain-source Voltage (V

Drain- gate Voltage (R

Gate-source Voltage

Drain Current (continuous) at T

Drain Current (pulsed)

Total Dissipation at T

Derating Factor

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

DS(on)

per area, exceptional avalanche

900 V

= 0.7

DSS

N-CHANNEL 900V - 0.7 - 8.9A - Max220

< 1

DS(on)

Parameter

= 25

= 20 k )

= 0)

8.9 A

= 25

= 100

(

) I

PowerMESH

8.9 A, di/dt

INTERNAL SCHEMATIC DIAGRAM

200 A/ s, V

-65 to 150

Max220

Value

1.28

900

160

150

8.9

5.6

4.5

STU8NB90

(BR)DSS

MOSFET

ADVANCE DATA

, Tj

JMAX

V/ns

Unit

1/5

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STU8NB90 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. PowerMESH I DS(on) D < 1 8.9 A Parameter = 100 STU8NB90 MOSFET ADVANCE DATA Max220 INTERNAL SCHEMATIC DIAGRAM Value 900 900 30 8.9 5.6 35 160 1.28 4.5 -65 to 150 150 8.9 A, di/dt 200 (BR)DSS Unit V ...

Page 2

... STSTU8NB90 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... 4 Test Conditions di/dt = 100 100 150 STSTU8NB90 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 8.9 ...

Page 4

... STSTU8NB90 DIM. MIN. A 4.3 A1 2.2 A2 2.9 b 0.7 b1 1.25 b2 1.2 c 0. 0.8 D3 2.8 e 2.44 E 10. 4/5 Max220 MECHANICAL DATA mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3 inch MIN. TYP. MAX. 0.169 0.181 0.087 0.094 0.114 0.122 0.027 0.036 0.049 0.055 0.047 0.054 0.18 0.023 0.626 0.641 0.354 0.368 0.031 ...

Page 5

... The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com . STSTU8NB90 5/5 ...

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