RT1N44BM ISAHAYA [Isahaya Electronics Corporation], RT1N44BM Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
RT1N44BM
Manufacturer Part Number
RT1N44BM
Description
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
1.RT1N44BM.pdf
(3 pages)
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
SYMBOL
V
T s t g
( B R ) C E O
I
V
V
V
C E ( s a t )
I
h
I
T j
P
C B O
R
f
C M
C B O
E B O
C E O
C
F E
T
C
2
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
PARAMETER
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
R T 1 N 4 4 B X SERIES
I
V
V
I
V
C
C
RT1N44BU
-55∼+150
CB
CE
CE
=100μA,R
=5V,I
=10mA,I
=6V,I
=50V,I
+150
150
C
E
E
=-10mA
=5mA
B
=0
BE
TEST CONDITION
=0.5mA
RT1N44BM
=∞
RATING
100
200
200
50
50
6
RT1N44BC
-55∼+150
+150
RT1N44BS
450
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
50
68
33
LIMIT
UNIT
TYP
200
mA
mA
℃
℃
47
V
V
V
mW
〈 Transistor 〉
MAX
0.1
0.3
61
UNIT
MHz
μA
kΩ
−
V
V