X00602MA STMICROELECTRONICS [STMicroelectronics], X00602MA Datasheet - Page 4

• Manufacturer Part Number: X00602MA
• Description: 0.8A SCRs
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

X00602MA
4/5
1E+0
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
1E+2
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 10: On-state characteristics (maximum
values).
1E+1
1E-2
1E-1
10
1E+1
1E+0
1E-1
1E-2
9
8
7
6
5
4
3
2
1
0
1E-2
1
ITSM(A)
dV/dt[Rgk]/dV/dt[Rgk=1k ]
0.5
ITM(A)
Tj = Tjmax.
Rd = 245m
Vto = 0.85V
Tj max.:
T
Repetitive
amb=25°C
1.0
Tj = 25°C
1E-1
10
1.5
Tjinitial=25°C
Nonrepetitive
Rgk(k )
VTM(V)
2.0
1E+0
100
2.5
Number of cycles
tp=10ms
3.0
Onecycle
1E+1
1000
3.5
Fig. 7: Relative variation of dV/dt immunity
versus
values).
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
100.0
20
10
10.0
5
2
1.0
0.1
1
1
0.01
dV/dt[Cgk]/dV/dt[Rgk=1k ]
ITSM(A),I
gate-cathode
2
t(A
2
2
s)
0.10
Cgk(nF)
tp(ms)
capacitance
ITSM
1.00
5
Tj initial = 25 °C
I
2
t
(typical
10.00
10