BTW68-1000 STMICROELECTRONICS [STMicroelectronics], BTW68-1000 Datasheet - Page 2

• Manufacturer Part Number: BTW68-1000
• Description: HIGH SURGE CAPABILITY
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

GATE CHARACTERISTICS (maximum values)
P G (AV) = 1W
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 68 (N)
2/5
Rth (j-c) DC Junction to case for DC
Symbol
Symbol
Rth (j-a)
I DRM
I RRM
dV/dt
V GT
V GD
V TM
I GT
tgt
I H
I L
tq
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM I G = 200mA
dI G /dt = 1.5A/ s
I G = 1.2 I GT
I T = 500mA
BTW 68
BTW 68 N I TM = 70A
V DRM Rated
V RRM Rated
Linear slope up to
V D =67%V DRM
gate open
V D =67%V DRM
dI TM /dt=30 A/ s
Junction to ambient
P GM = 40W (tp = 20 s)
(DC) R L =33
(DC) R L =33
ITM= 60A
gate open
I TM = 60A
dV D /dt= 20V/ s
Test Conditions
tp= 380 s
V DRM
V DRM 800V
Parameter
I FGM = 8A (tp = 20 s)
V R = 75V
1000V
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
BTW 68 N
BTW 68
V RGM = 5 V.
MAX
MAX
MAX
MAX
MAX
TYP
TYP
TYP
MIN
MIN
BTW 68
2.1
Value
Value
0.02
100
500
250
1.5
0.2
1.1
0.8
50
40
75
50
2
6
BTW 68 N
2.2
V/ s
Unit
Unit
mA
mA
mA
mA
C/W
C/W
V
V
V
s
s