M74VHC1GT08DTT1G ON Semiconductor, M74VHC1GT08DTT1G Datasheet - Page 2

• Manufacturer Part Number: M74VHC1GT08DTT1G
• Description: IC GATE AND SGL TTL 2IN SOT23-5
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of M74VHC1GT08DTT1G

• Logic Type: AND Gate
• Number Of Inputs: 2
• Number Of Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-5, TSOT-5, TSOP-5
• Output Current: 8mA
• No. Of Inputs: 2
• Supply Voltage Range: 3V To 5.5V
• Logic Case Style: SOT-23
• No. Of Pins: 5
• Operating Temperature Range: -55°C To +125°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Family Type: VHC
• Dc: 1006
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M74VHC1GT08DTT1GOS; MC74VHC1GT08DTT1G; MC74VHC1GT08DTT1GOS; MC74VHC1GT08DTT1GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Temperature °C
Latchup
V
V
V
I
V
V
t
T
V
I
I
q
V
OUT
P
r
OUT
I
T
T
ESD
OUT
T
OK
CC
stg
CC
IK
JA
CC
, t
IN
IN
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Above V
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
CC
and Below GND at 125°C (Note 4)
http://onsemi.com
Charged Device Model (Note 3)
Human Body Model (Note 1)
V
OUT
Machine Model (Note 2)
2
< GND; V
V
V
Figure 3. Failure Rate vs. Time Junction Temperature
SC−88A, TSOP−5
CC
CC
High or Low State
High or Low State
SC−88A, TSOP−5
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
1
V
V
CC
CC
> V
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
= 0
= 0
CC
10
Min
−55
3.0
0.0
0.0
0.0
0
0
−0.5 to V
TIME, YEARS
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 200
+150
±500
−20
+20
+25
+50
200
333
260
N/A
CC
+ 0.5
+125
Max
V
100
5.5
5.5
5.5
20
100
CC
°C/W
Unit
Unit
ns/V
mW
mA
mA
mA
mA
mA
1000
°C
°C
°C
°C
V
V
V
V
V
V
V