ra13h8891mb Quanzhou Jinmei Electronic Co.,Ltd., ra13h8891mb Datasheet - Page 2

• Manufacturer Part Number: ra13h8891mb
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

MAXIMUM RATINGS
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
All parameters, conditions, ratings, and limits are subject to change without notice.
RA13H8891MB
SYMBOL PARAMETER
T
case(OP)
P
V
V
P
I
T
2f
η
ρ
—
—
P
GG
f
out
GG
DD
out
stg
in
T
in
o
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
Frequency Range
Output Power
Total Efficiency
2
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
nd
Harmonic
(T
case
=+25°C, unless otherwise specified)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
CONDITIONS
V
V
P
V
P
V
Load VSWR=20:1
DD
GG
in
DD
out
DD
=1mW
(T
=12.5V
=10.0-15.2V, P
<20W (V
=15.2V, P
=5V
case
=+25°C, Z
MITSUBISHI ELECTRIC
GG
in
=1mW, P
control), Load VSWR=3:1
CONDITIONS
V
V
f=880-915MHz,
Z
G
GG
DD
=Z
G
in
<12.5V, P
<5V
=Z
=0.5-2mW,
L
=50Ω
L
2/8
=50Ω, unless otherwise specified)
out
=13W (V
in
=0mW
RoHS COMPLIANCE
GG
control),
No degradation or destroy
RA13H8891MB
No parasitic oscillation
MITSUBISHI RF POWER MODULE
MIN
880
13
35
-30 to +110
-40 to +110
RATING
TYP
17
20
6
5
1
MAX
915
-30
3:1
24 Jan 2006
UNIT
UNIT
MHz
mW
dBc
mA
°C
°C
—
—
—
W
W
%
V
V