q67040-a4226-a2 ETC-unknow, q67040-a4226-a2 Datasheet

no-image

q67040-a4226-a2

Manufacturer Part Number
q67040-a4226-a2
Description
Igbt With Antiparallel Diode Forward Voltage Drop High Switching Speed Tail Current Latch-up Free Including Fast Free-wheel Diode
Manufacturer
ETC-unknow
Datasheet
IGBT With Antiparallel Diode
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 314D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current, (limited by bond wire)
T
T
Pulsed collector current, t
T
T
Diode forward current
T
Pulsed diode current, t
T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
C
GE
= 60 °C
= 90 °C
= 25 °C
= 90 °C
= 90 °C
= 25 °C
= 25 °C
= 20 k
Preliminary data
p
= 1 ms
p
= 1 ms
V
1200V 42A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
I
I
P
T
T
C
Cpuls
F
Fpuls
j
stg
CE
CGR
GE
tot
Pin 1
G
Ordering Code
Q67040-A4226-A2
-55 ... + 150
-55 ... + 150
Values
± 20
1200
1200
168
300
42
33
84
66
28
Pin 2
C
BUP 314D
Jul-30-1996
Unit
V
A
W
°C
Pin 3
E

Related parts for q67040-a4226-a2

q67040-a4226-a2 Summary of contents

Page 1

... TO-218 AB Symbol CGR Cpuls Fpuls P tot stg 1 BUP 314D Pin 2 Pin 3 Pin Ordering Code Q67040-A4226-A2 Values Unit 1200 V 1200 ± 168 W 300 -55 ... + 150 °C -55 ... + 150 Jul-30-1996 ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...

Page 5

Typ. output characteristics parameter µ ° 17V 15V 40 I 13V C 11V ...

Page 6

Typ. switching time inductive load , T = 125° par 600 ± ...

Page 7

Typ. gate charge Gate parameter puls 600 Short circuit safe ...

Page 8

Typ. forward characteristics parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance Z ...

Page 9

Package Outlines Dimensions in mm Weight: Semiconductor Group 9 BUP 314D Jul-30-1996 ...

Related keywords