q67041-s4025 Infineon Technologies Corporation, q67041-s4025 Datasheet - Page 2

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q67041-s4025

Manufacturer Part Number
q67041-s4025
Description
Sipmos Small-signal-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
Static Characteristics, at T
Drain- source breakdown voltage
V
V
Gate threshold voltage, V
I
I
Zero gate voltage drain current
V
V
V
V
Gate-source leakage current
V
V
Drain-Source on-state resistance
V
V
Drain-Source on-state resistance
V
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Termal Characteristics
Parameter
Dynamic Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint; t
@ 6 cm
@ min. footprint; t
@ 6 cm
D
D
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
= 10 µA
= -450 µA
= 0 V, I
= 0 V, I
= 20 V, V
= 20 V, V
= -20 V, V
= -20 V, V
= 20 V, V
= -20 V, V
= 4.5 V, I
= -4.5 V, I
= 10 V, I
= -10 V , I
2
2
cooling area
cooling area
D
D
D
D
= 250 µA
= -250 µA
GS
GS
DS
D
D
GS
GS
DS
= 3.7 A
= 3 A
= -3 A
= -3.7 A
= 0 V, T
= 0 V, T
= 0 V
= 0 V, T
= 0 V, T
= 0 V
10 sec.
10 sec.
1)
1)
; t
; t
j
j
GS
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
j
10 sec.
10 sec.
= V
= 25 °C, unless otherwise specified
DS
Preliminary data
Page 2
N
P
N
P
N
N
P
P
N
P
N
P
N
P
N
P
N
N
P
P
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
-20
1.2
20
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.05
0.06
-1.5
-0.1
typ.
1.5
0.1
-10
-10
0.1
0.1
10
10
-
-
-
-
-
-
-
-
BSO 215 C
1999-09-22
-100
-100
max.
0.15
0.15
62.5
62.5
100
100
110
100
0.1
0.1
40
40
-2
-1
2
1
-
-
V
µA
nA
Unit
K/W

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