blv5n60 Estek Electronics Co. Ltd, blv5n60 Datasheet
blv5n60
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blv5n60 Summary of contents
Page 1
... Thermal Resistance, Junction to case th j-c R Thermal Resistance, Junction to Ambient th j-a N-channel Enhancement Mode Power MOSFET . =25 C unless otherwise noted ) C Parameter =100 C Parameter Max. Max Total 6 Pages BLV5N60 BV 600V DSS 2.5Ω Ω Ω Ω R DS(ON) I 4.5A D Value Units 600 4 104 W 0.83 W/℃ ...
Page 2
... ± 20V GS V =480V DD I =4. =10V GS note3 V =300V DD I =4. =25 G note3 V =25V 1MHz Test Conditions V =0V, I =4. =0V, I =4. /dt = 100A/ Total 6 Pages BLV5N60 Min. Typ. Max. 600 - - - 0 2 4 100 - - ±100 - ...
Page 3
... Typical Characteristics Fig 1. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature N-channel Enhancement Mode Power MOSFET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Junction Temperature - 3 - Total 6 Pages BLV5N60 ...
Page 4
... Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 7. Gate Charge Characteristics N-channel Enhancement Mode Power MOSFET Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 8. Capacitance Characteristics - 4 - Total 6 Pages BLV5N60 ...
Page 5
... Typical Characteristics ( ( ( ( continued) ) ) ) Fig 10. Transient Thermal Response Curve N-channel Enhancement Mode Power MOSFET Fig 9. Maximum Safe Operating Area - 5 - Total 6 Pages BLV5N60 ...
Page 6
... Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 13. Switching Time Circuit Fig 15. Unclamped Inductive Switching Test Circuit N-channel Enhancement Mode Power MOSFET Fig 12. Gate Charge Waveform Fig 14. Switching Time Waveform Fig 16. Unclamped Inductive Switching Waveforms - 6 - Total 6 Pages BLV5N60 ...