blv9n60 Estek Electronics Co. Ltd, blv9n60 Datasheet

blv9n60

Manufacturer Part Number

blv9n60

Description

N-channel Enhancement Mode Power Mosfet

Manufacturer

Estek Electronics Co. Ltd

Datasheet

1.BLV9N60.pdf (6 pages)

Current page: 1 of 6
Download datasheet (372Kb)

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

Thermal Characteristics

Symbol

Avalanche Energy Specified

Fast Switching

Simple Drive Requirements

SDG

th j-a

th j-c

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current (

Drain Current (pulsed) (Note 1)

Power Dissipation

Linear Derating Factor

Single Pulsed Avalanche Energy (Note2)

Avalanche Current

Repetitive Avalanche Energy

Operating Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to case

Thermal Resistance, Junction to Ambient

Parameter

(

=25

C unless otherwise noted )

=100

Total 6 Pages

- 1 -

)

N-channel Enhancement Mode Power MOSFET

Max.

-55 to +150

Value

+ 20

12.5

62.5

600

125

667

8.5

5.5

1.0

8.5

1.0

DS(ON)

DSS

BLV9N60

Units

℃/ W

W/℃

Units

600V

1.0Ω Ω Ω Ω

8.5A

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