MSB709 ETL [E-Tech Electronics LTD], MSB709 Datasheet
MSB709
Manufacturer Part Number
MSB709
Description
PNP General Purpose Amplifier Transistor Surface Mount
Manufacturer
ETL [E-Tech Electronics LTD]
Datasheet
1.MSB709.pdf
(1 pages)
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Quantity
Price
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PNP General Purpose Amplifier
Transistor Surface Mount
MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Current - Peak
THERMAL CHARACTERISTICS
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I
Collector-Base Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
DC Current Gain
(V
Collector-Emitter Saturation Voltage
(I
1. Pulse Test: Pulse Width
DEVICE MARKING
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
C
CE
= –100mAdc, I
=–10Vdc, I
Marking Symbol
Rating
Characteristic
Characteristic
C
(1)
= –2.0mAdc)
B
=–10mAdc)
(T
A
<
= 25 °C)
300 s, D.C.
CB
CE
E
=–45Vdc, I
=–10Vdc, I
=–10 Adc,I
C
AR X
=–10 Adc,I
C
(T
=–2.0mAdc,I
A
<
= 25 °C)
Symbol
Symbol
V
V
V
2%.
E
=0)
B
(BR)CBO
(BR)CEO
I
(BR)EBO
T
P
T
=0)
E
I
C(P)
stg
=0)
C
D
E
J
=0)
B
=0)
–55 ~ +150
BASE
Value
–100
–200
Max
–7.0
2
–60
–45
200
150
Symbol
COLLECTOR
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
h
CBO
CEO
CE(sat)
FE1
3
EMITTER
mAdc
mAdc
Unit
Unit
Vdc
Vdc
mW
Vdc
°C
°C
1
Min
–7.0
–45
–60
210
—
—
—
MSB709-RT1
–100
Max
–0.1
–0.5
CASE 318D–03, STYLE1
340
—
—
—
1
SC–59
2
Unit
nAdc
Vdc
Vdc
Vdc
Vdc
—
Adc
3
N2–1/1
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