BU307F ISC [Inchange Semiconductor Company Limited], BU307F Datasheet - Page 2

• Manufacturer Part Number: BU307F
• Description: isc Silicon NPN Power Transistor
• Manufacturer: ISC [Inchange Semiconductor Company Limited]

INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
T
isc Website：www.iscsemi.cn
C
Switching Times ; Resistive Load
SYMBOL
=25℃ unless otherwise specified
V
V
V
V
V
V
(BR)CEO
CE(sat)-1
CE(sat)-2
CE(sat)-3
BE(sat)-1
BE(sat)-2
h
h
h
I
I
C
CES
EBO
FE-1
FE-2
FE-3
f
t
t
t
t
OB
T
d
s
Silicon NPN Power Transistor
r
f
Collector-Emitter
Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
PARAMETER
BU306F
BU307F
I
I
I
I
I
I
I
I
V
V
V
I
I
I
I
I
I
V
C
C
C
C
C
C
C
C
C
C
C
E
C
C
CE
CE
EB
CC
= 0 ; V
= 0.1A ;I
= 2A; I
= 5A; I
= 5A; I
= 8A; I
= 2A; I
= 5A; I
= 5A; I
= 0.5A ; V
= 2A ; V
= 5A ; V
= 0.5A ; V
= 5A; I
= 9V; I
= V
= V
= 125V; t
2
CESmax
CESmax
CB
B
B
B
B
B
B
B
B1
= 0.4A
B
= 1A
B
= 1A; T
B
= 2A
B
= 0.4A
B
= 1A
B
= 1A; T
B
CE
CE
C
B
= -I
= 10V
CONDITIONS
= 0; L=25mH
B
=0
CE
CE
= 5V
= 5V
p
;V
;V
B2
= 25μs
= 5V
= 10V, f
BE
BE
= 1A;
J
J
= -1.5V
= -1.5V;T
= 100℃
= 100℃
test
= 1.0MHz
J
= 100℃
isc
Product Specification
BU306F/307F
MIN
300
400
15
8
6
TYP.
3.0
80
4
MAX
1.0
1.5
2.0
3.0
1.2
1.6
1.5
0.1
1.0
0.7
50
40
30
1
5
1
UNIT
MHz
mA
mA
μs
μs
μs
μs
pF
V
V
V
V
V
V